MT16VDDF12864HY-335D2 Micron Technology Inc, MT16VDDF12864HY-335D2 Datasheet - Page 27

• Manufacturer Part Number: MT16VDDF12864HY-335D2
• Description: MODULE SDRAM DDR 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HY-335D2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 28
pdf: 09005aef80a77a90, source: 09005aef80a646bc
DDF16C64_128x64HG.fm - Rev. D 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Rows Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data With
Module Data With (Continued)
Moduel Voltage Interface Levels
SDRAM Cycle Time,
(See note 1)
SDRAM Access From Clock,
CAS Latency = 2.5
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(See note 1)
SDRAM Access From CK, (AC, CAS Latency = 2
SDRAM Cycle Time,
SDRAM Access From CK,
CAS Latency = 1.5
Minimum Row Precharge Time,
Minimum Row to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
(See note 2)
Module Rank Density
DESCRIPTION
t
t
t
CK, CAS Latency = 2.5
CK, CAS Latency = 2
CK, CAS Latency = 1.5
t
AC,
t
AC,
t
RAS
t
RRD
t
RCD
t
RP
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
Unbuffered/Diff. Clock
7.5ns (-335/-262/-26A)
45ns (-262/-26A/-265)
27
15 ns (-262/-26A/-265)
ENTRY (VERSION)
Fast/Concurrent AP
20ns (-26A/-265)
20ns (-26A/-265)
256MB, 512MB
7ns (-262/-26A)
SDRAM DDR
7.5ns( -265)
0.7ns (-335)
0.7ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
7.8µs/SELF
6ns (-335)
SSTL 2.5V
Non-ECC
Non-ECC
1 clock
10, 11
2, 4, 8
2, 2.5
N/A
N/A
128
256
13
64
x8
2
0
4
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
200-PIN DDR SODIMM
512MB, 1GB (x64, DR)
MT16VDDF6464H MT16VDDF12864H
0D
0A
A0
2A
2D
80
08
07
02
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
40
©2004 Micron Technology, Inc.
0D
A0
2A
2D
80
08
07
0B
02
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
80