MT16VDDF6464HY-335G2 Micron Technology Inc, MT16VDDF6464HY-335G2 Datasheet - Page 9

• Manufacturer Part Number: MT16VDDF6464HY-335G2
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF6464HY-335G2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.432A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
DRAM Operating Conditions
Table 8:
Design Considerations
Simulations
Power
PDF: 09005aef80a77a90/Source: 09005aef80a646bc
DDF16C64_128x64_L_H.fm - Rev. G 8/08 EN
V
Symbol
IN
V
, V
I
T
OZ
DD
I
A
I
OUT
Absolute Maximum Ratings
Module and Component Speed Grades
DDR components may exceed the listed module speed grades
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
Module Speed Grade
supply voltage relative to V
Notes:
input 0V ≤ V
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
Recommended AC operating conditions are given in the DDR component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
-40B
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to
ensure the required supply voltage is maintained.
-335
-265
IN
on Micron’s Web site.
≤ 1.35V (All other pins not under
OUT
SS
SS
≤ V
DD
1
IN
Q; DQ are
≤ V
DD
9
512MB, 1GB (x64, DR) 200-Pin DDR SODIMM
;
Address inputs,
RAS#, CAS#, WE#, BA
S#, CKE, CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
TN-00-08: “Thermal
Electrical Specifications
-5B
-75
-6
Min
–1.0
–0.5
–32
–10
–40
–16
©2003 Micron Technology, Inc. All rights reserved
–4
0
Applications,” available
Max
+3.6
+3.2
+32
+16
+10
+70
+85
+4
Units
µA
µA
°C
°C
V
V