MT4VDDT864HG-26AB2 Micron Technology Inc, MT4VDDT864HG-26AB2 Datasheet - Page 7

• Manufacturer Part Number: MT4VDDT864HG-26AB2
• Description: MODULE SDRAM DDR 64MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT864HG-26AB2

• Memory Type: DDR SDRAM
• Memory Size: 64MB
• Speed: 266MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Specifications
Table 7:
PDF: 09005aef837131bb/Source: 09005aef8086ea0b
dd4c16_32x64h.fm - Rev. E 10/08 EN
Vin, Vout
Symbol
Vdd
Ioz
T
Ii
A
Absolute Maximum DC Ratings
Parameter
Vdd supply voltage relative to Vss
Voltage on any pin relative to Vss
Input leakage current; Any input 0V ≤ Vin ≤ Vdd;
Vref input 0V ≤ Vin ≤ 1.35V (All other pins not under
test = 0V)
Output leakage current; 0V ≤ Vout ≤ Vddq; DQ and
ODT are disabled
DRAM ambient operating temperature
Notes:
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions above those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM
1
7
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
Electrical Specifications
Min
–0.5
©2003 Micron Technology, Inc. All rights reserved.
–40
–1
–8
–4
–2
–5
0
Applications,” available
Max
+3.6
+3.2
+70
+85
+8
+4
+2
+5
Units
µA
µA
°C
°C
V
V