MT5VDDT1672HG-26AC3 Micron Technology Inc, MT5VDDT1672HG-26AC3 Datasheet - Page 13

• Manufacturer Part Number: MT5VDDT1672HG-26AC3
• Description: MODULE SDRAM DDR 128MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT5VDDT1672HG-26AC3

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 266MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 16Mx72
• Total Density: 128MByte
• Access Time (max): 75ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 925mA
• Number Of Elements: 5
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 13:
PDF: 09005aef80a8e793/Source: 09005aef80a8e767
dd5c16_32x72h.fm - Rev. F 2/07 EN
36–40 Reserved
48–61 Reserved
65–71 Manufacturer’s JEDEC ID code
73–90 Module part number (ASCII)
95–98 Module serial number
Byte
127
99–
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
MIN active-to-active/refresh time,
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
SDRAM device MAX cycle time,
t
SDRAM device MAX DQS–DQ skew time,
t
SDRAM device MAX read data hold skew
factor,
Reserved
DIMM height
SPD revision
Checksum for bytes 0–62
Manufacturer’s JEDEC ID code
Manufacturing location
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Reserved for manufacturer-specific data
CK (MAX)
DQSQ
Serial Presence-Detect Matrix (-335, -26A, and -265 Speed Grades) (continued)
t
QHS
Notes:
Description
1. The value for -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-
4. The value of
specification value is 7.5ns.
specification value is 40ns.
case (slow slew rate) value is represented here. Systems requiring the fast slew rate setup
and hold values are supported, provided the faster minimum slew rate is met.
specifications; actual DDR SDRAM device specification is 15ns.
t
RFC
t
DH
t
t
t
DS
RC
IH
t
t
RAS used for -262/-26A/-265 modules is calculated from
RP,
3
t
RCD, and
128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
t
CK set to 7ns (0 x 70) for optimum BIOS compatibility. Actual device
0.75ns (-262/-26A/-265)
1.0ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
75ns (-262/-26A/-265)
13ns (-262/-26A/-265)
t
RAP for -335 modules indicated as 18ns to align with industry
13
Entry (Version)
65ns (-26A/-265)
60ns (-335/-262)
0.45ns (-335)
0.45ns (-335)
0.45ns (-335)
0.55ns (-335)
0.8ns (-335)
(continued)
72ns (-335)
12ns (-335)
Release 1.0
MICRON
-26A
1–12
-335
-262
-265
1–9
0
0
0
0
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Variable data
Variable data
Variable data
Variable data
128MB
01–0C
01–09
A0
2D
3C
4B
BC
2C
80
45
50
45
50
00
41
48
30
34
32
55
75
00
01
00
10
29
E9
19
00
00
00
Serial Presence-Detect
©2004 Micron Technology, Inc. All rights reserved.
t
RC -
t
RP. Actual device
Variable data
Variable data
Variable data
Variable data
256MB
01–0C
01–09
DD
A0
2D
4A
0A
3A
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
01
00
10
2C
00
00
00