MT8HTF3264HDY-53EB3 Micron Technology Inc, MT8HTF3264HDY-53EB3 Datasheet
MT8HTF3264HDY-53EB3
Specifications of MT8HTF3264HDY-53EB3
Related parts for MT8HTF3264HDY-53EB3
MT8HTF3264HDY-53EB3 Summary of contents
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... DDR2 SDRAM SODIMM MT8HTF3264HDY – 256MB MT8HTF6464HDY – 512MB MT8HTF12864HDY – 1GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB (128 Meg x 64) • ...
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... Table 3: Part Numbers and Timing Parameters – 256MB Modules 1 Base device: MT47H16M16, 256Mb DDR2 SDRAM Module 2 Part Number Density MT8HTF3264HDY-667__ MT8HTF3264HTY-667__ MT8HTF3264HDY-53E__ MT8HTF3264HTY-53E__ MT8HTF3264HDY-40E__ MT8HTF3264HTY-40E__ Table 4: Part Numbers and Timing Parameters – 512MB Modules 1 Base device: MT47H32M16, 512Mb DDR2 SDRAM Module 2 Part Number Density MT8HTF6464HDY-80E__ MT8HTF6464HTY-80E__ ...
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... Table 5: Part Numbers and Timing Parameters – 1GB Modules 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module 2 Part Number Density MT8HTF12864HDY-80E__ MT8HTF12864HTY-80E__ MT8HTF12864HDY-800__ MT8HTF12864HTY-800__ MT8HTF12864HDY-667__ MT8HTF12864HTY-667__ MT8HTF12864HDY-53E__ MT8HTF12864HTY-53E__ MT8HTF12864HDY-40E__ MT8HTF12864HTY-40E__ 1. The data sheet for the base device can be found on Micron’s Web site. ...
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Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 ...
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... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
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Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef80ebed66 ...
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Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# CS# UDQS DQS0 UDQS# DQS0# UDM DM0 DQ DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 U1 DQ DQ7 DQS1 LDQS DQS1# LDQS# DM1 LDM ...
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... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 10: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter Operating one bank ...
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Table 10: DDR2 I Specifications and Conditions – 256MB (Continued) DD Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter Operating bank interleave read current: ...
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Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter Operating one bank active-precharge current: t ...
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Table 11: DDR2 I Specifications and Conditions – 512MB (Continued) DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter Operating bank interleave read current: ...
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Table 12: DDR2 I Specifications and Conditions – 1GB (Die Revision A) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter Operating one ...
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Table 13: DDR2 I Specifications and Conditions – 1GB (Die Revision E and G) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter ...
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Table 13: DDR2 I Specifications and Conditions – 1GB (Die Revision E and G) (Continued) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet ...
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Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
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Module Dimensions Figure 3: 200-Pin DDR2 SODIMM 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP U5 Pin 200 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. Notes: 2. The ...