MT8HTF3264HY-667B3 Micron Technology Inc, MT8HTF3264HY-667B3 Datasheet - Page 9
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MT8HTF3264HY-667B3
Manufacturer Part Number
MT8HTF3264HY-667B3
Description
MODULE DDR2 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF12864HY-40EA3.pdf
(14 pages)
Specifications of MT8HTF3264HY-667B3
Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 10:
PDF: 09005aef80eec96e/Source: 09005aef80eec946
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
Parameter/Condition
Operating one bank active-precharge current;
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current; I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current; All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current; All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open, continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current; All device banks open, continuous burst
reads, I
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current;
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks interleaving
reads, I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching; See I
RC =
RCD =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
t
t
t
t
RP (I
DD
RC (I
CK (I
CK (I
t
t
t
OUT
OUT
RAS MAX (I
RAS MAX (I
RCD (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values are for the MT47H32M8 DDR2 SDRAM only and are computed from values specified in the
256Mb (32 Meg x 8) component data sheet
); CKE is LOW; Other control and address bus
),
DD
t
t
RAS =
RC =
); CKE is HIGH, S# is HIGH between valid commands; Address
DD
DD
t
t
),
),
CK =
DD
RC (I
t
RAS MIN (I
t
t
DD
RP =
RP =
t
CK =
Specifications and Conditions – 256MB
), AL = 0;
DD
t
CK (I
t
t
),
RP (I
RP (I
t
CK (I
t
RRD =
DD
DD
DD
DD
),
DD
DD
DD
t
); CKE is HIGH, S# is HIGH between valid
CK =
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
t
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
RC =
), AL = 0;
); Refresh the command at every
), AL =
t
RRD (I
t
CK (I
t
RC (I
t
DD
RCD (I
DD
t
),
DD
CK =
),
t
t
DD
RCD =
),
CK =
t
t
DD
RAS =
CK =
t
t
4W
DD
RAS =
CK =
t
CK (I
) - 1 ×
7 conditions for detail
t
CK (I
t
t
t
RCD (I
OUT
CK =
CK (I
t
t
DD
t
CK (I
RAS MAX (I
t
CK =
RAS MIN (I
9
t
DD
),
CK (I
= 0mA; BL = 4,
DD
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
t
DD
),
CK (I
DD
t
),
CK (I
); CKE is
DD
); CKE is
DD
);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
); CKE
);
),
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
Electrical Specifications
1,520
1,440
1,440
2,080
-667
720
800
320
320
240
400
40
48
40
©2004 Micron Technology, Inc. All rights reserved.
1,280
1,200
1,360
1,920
-53E
640
720
280
280
200
320
40
48
40
1,000
1,320
1,840
-40E
600
680
200
240
160
240
920
40
48
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA