MT9HTF3272Y-40EB3 Micron Technology Inc, MT9HTF3272Y-40EB3 Datasheet - Page 12

• Manufacturer Part Number: MT9HTF3272Y-40EB3
• Description: MODULE SDRAM DDR2 256MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF3272Y-40EB3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Table 10: DDR2 I
Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8)
component data sheet
PDF: 09005aef82250868
htf9c32_64_128x72.pdf - Rev. F 3/10 EN
Parameter
Operating one bank active-precharge current:
(I
mands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
are stable; Data bus inputs are floating
Active standby current: All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are switch-
ing
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
=
inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data bus inputs are floating
DD
RCD =
CK (I
DD
t
RP (I
),
DD
Specifications
t
RAS =
OUT
DD
DD
DD
t
); CKE is LOW; Other control and address bus inputs
RCD (I
DD
),
),
); CKE is HIGH, S# is HIGH between valid commands; Address bus
= 0mA; BL = 4, CL = CL (I
t
t
), AL = 0;
RP =
RP =
t
RAS MIN (I
DD
); CKE is HIGH, S# is HIGH between valid commands; Address
t
t
RP (I
RP (I
DD
t
CK =
DD
DD
Specifications and Conditions – 256MB
DD
DD
t
); CKE is HIGH, S# is HIGH between valid commands;
); CKE is HIGH, S# is HIGH between valid commands;
CK =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid com-
t
CK (I
t
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
CK (I
DD
),
DD
DD
t
CK =
t
), AL = 0;
RC =
); REFRESH command at every
t
CK (I
t
RC (I
t
DD
CK =
DD
),
),
t
DD4W
CK =
t
t
t
RAS =
CK =
t
RAS =
t
CK (I
CK =
t
CK =
t
CK (I
t
DD
CK (I
t
OUT
t
CK =
t
t
RAS MAX (I
t
CK (I
RAS MIN (I
CK =
),
12
DD
t
= 0mA; BL = 4,
DD
RAS =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
),
t
DD
CK (I
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC (I
t
DD
RAS
DD
DD
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
); CKE
t
),
t
),
);
RC
RAS
DD
t
RP
)
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
I
I
DD2N
DD3N
DD4R
DD2P
DD3P
DD0
DD1
DD5
DD6
-667
1710
1620
1620
810
900
360
360
270
450
45
54
45
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1440
1350
1530
-53E
720
810
315
315
225
360
45
54
45
Specifications
1125
1035
1485
-40E
675
765
225
270
180
270
45
54
45
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA