MT9HTF6472AY-53EB3 Micron Technology Inc, MT9HTF6472AY-53EB3 Datasheet - Page 12
![MODULE SDRAM DDR2 512MB 240DIMM](/photos/7/83/78383/mfg557-240-dimm_sml.jpg)
MT9HTF6472AY-53EB3
Manufacturer Part Number
MT9HTF6472AY-53EB3
Description
MODULE SDRAM DDR2 512MB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF6472AY-667B3.pdf
(21 pages)
Specifications of MT9HTF6472AY-53EB3
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
533MT/s
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1235
MT9HTF6472AY-53EB3
MT9HTF6472AY-53EB3
DRAM Operating Conditions
Table 10: Module and Component Speed Grades
DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
Module Speed Grade
-1GA
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron's Web site. Module speed grades cor-
relate with component speed grades.
-80E
-800
-667
-53E
-40E
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
DRAM Operating Conditions
-187E
-25E
-37E
-25
-5E
-3
© 2003 Micron Technology, Inc. All rights reserved.