MT9VDDT6472HY-335D2 Micron Technology Inc, MT9VDDT6472HY-335D2 Datasheet - Page 2
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MT9VDDT6472HY-335D2
Manufacturer Part Number
MT9VDDT6472HY-335D2
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDDT6472HY-335D2.pdf
(15 pages)
Specifications of MT9VDDT6472HY-335D2
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.575A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. E 1/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDDT1672HG-335__
MT9VDDT1672HY-335__
MT9VDDT1672HY-262__
MT9VDDT1672HG-26A__
MT9VDDT1672HG-265__
MT9VDDT3272HG-40B__
MT9VDDT3272HY-40B__
MT9VDDT3272HG-335__
MT9VDDT3272HY-335__
MT9VDDT3272HG-262__
MT9VDDT3272HG-265__
MT9VDDT3272HY-265__
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 128MB Modules
Base device: MT46V16M8,
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
2
2
Nomenclature
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM
actual DDR SDRAM device specifications are 15ns.
Module
Density
Module
Density
128MB
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
CL = 3
400
1
1
–
–
–
–
128Mb (16 Meg x 8)
128Mb DDR SDRAM
256Mb DDR SDRAM
8K (A0–A11)
4 (BA0, BA1)
Data Rate (MT/s)
t
1K (A0–A9)
RCD and
Configuration
Configuration
128MB
1 (S0#)
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
4K
CL = 2.5
333
333
266
266
266
t
RP for -335 modules show 18ns to align with industry specifications;
2
CL = 2
266
266
266
266
200
Bandwidth
Bandwidth
Module
Module
256Mb (32 Meg x 8)
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
256MB
1 (S0#)
t
(ns)
8K
RCD
15
18
15
20
20
Memory Clock/
Memory Clock/
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
15
20
20
RP
©2004 Micron Technology, Inc. All rights reserved
512Mb (64 Meg x 8)
2K (A0–A9, A11)
4 (BA0, BA1)
8K (A0–A12)
(ns)
t
512MB
1 (S0#)
55
60
60
65
65
RC
(CL-
(CL-
Clock Cycles
Clock Cycles
8K
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
2-2-2
2-3-3
3-3-3
3-3-3
2-2-2
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1