MT9VDDT6472Y-265D2 Micron Technology Inc, MT9VDDT6472Y-265D2 Datasheet - Page 2

• Manufacturer Part Number: MT9VDDT6472Y-265D2
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472Y-265D2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.305A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80e119b2/Source: 09005aef80e11976
DD9C16_32_64x72.fm - Rev. D 1/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDDT1672G-335__
MT9VDDT1672Y-335__
MT9VDDT1672G-26A__
MT9VDDT1672G-265__
MT9VDDT1672Y-265__
MT9VDDT3272G-335__
MT9VDDT3272G-262__
MT9VDDT3272G-26A__
MT9VDDT3272Y-26A__
MT9VDDT3272G-265__
MT9VDDT3272Y-265__
Speed
Grade
-26A
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 128MB Modules
Base device: MT46V16M8,
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
2
2
Nomenclature
Notes:
Notes:
Industry
PC2700
PC2100
PC2100
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
128MB, 256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT9VDDT3272G-335G3.
Module
Density
Module
Density
128MB
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
256MB
1
1
CL = 2.5
128Mb DDR SDRAM
256Mb DDR SDRAM
128Mb (16 Meg x 8)
333
266
266
266
Data Rate (MT/s)
t
RCD and
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
Configuration
Configuration
128MB
16 Meg x 72
32 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
1 (S0#)
4K
t
RP for -335 modules show 18ns to align with industry specifications;
CL = 2
266
266
266
200
2
Bandwidth
Bandwidth
Module
Module
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb (32 Meg x 8)
t
(ns)
RCD
18
15
20
20
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
256MB
1 (S0#)
8K
Memory Clock/
Memory Clock/
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
18
15
20
20
RP
©2003 Micron Technology, Inc. All rights reserved
512Mb (64 Meg x 8)
2K (A0–A9, A11)
(ns)
4 (BA0, BA1)
t
8K (A0–A12)
60
60
65
65
RC
512MB
1 (S0#)
(CL-
(CL-
Clock Cycles
Clock Cycles
8K
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
2-3-3
2-2-2
2-3-3
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1