MT18VDDF12872DY-40BF1 Micron Technology Inc, MT18VDDF12872DY-40BF1 Datasheet - Page 24
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT18VDDF12872DY-40BF1
Manufacturer Part Number
MT18VDDF12872DY-40BF1
Description
MODULE DDR SDRAM 1GB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872DY-40BD3.pdf
(36 pages)
Specifications of MT18VDDF12872DY-40BF1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
45. I
46. Whenever the operating frequency is altered, not
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
DD
DD
2N specifies the DQ, DQS, and DM to be
2
F
is “worst case.”
DD
DD
2
F
2
, I
F
DD
except I
2
N
, and I
DD
DD
2Q specifies the
2Q are similar,
DD
2Q is
24
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic high or logic low.
= 40ns and
frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
512MB, 1GB (x72, ECC, SR)
t
RAS (MAX) = 120,000ns at any slower
©2004 Micron Technology, Inc. All rights reserved.
t
RAS (MIN)