MT16VDDT12864AG-40BF2 Micron Technology Inc, MT16VDDT12864AG-40BF2 Datasheet - Page 29

• Manufacturer Part Number: MT16VDDT12864AG-40BF2
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT12864AG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.6A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 22: Serial Presence-Detect Matrix (256MB, 512MB, and 1GB)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 31
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on
Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
= 2.5) (See note 1)
SDRAM Access From Clock,
(CAS Latency = 2.5)
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary DDR
SDRAM)
Error-Checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(CAS Latency = 2)
SDRAM Access From CK,
(CAS Latency = 2)
SDRAM Cycle Time,
(CAS Latency = 1.5)
SDRAM Access From CK,
(CAS Latency = 1.5)
Minimum Row Precharge Time,
(see note 4)
DESCRIPTION
t
t
t
CK, (CAS Latency
CK
CK
t
t
AC
AC
t
AC
t
RP
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
ENTRY (VERSION)
Fast/Concurrent AP
15.62µs, 7.8µs/SELF
Unbuffered/Diff.
20ns (-26A/-265)
7ns (-262/-26A)
SDRAM DDR
7.5ns (-265)
0.7ns (-335)
0.7ns (-335)
18ns (-335)
15ns (-262)
10ns (-265
6ns (-335)
SSTL 2.5V
1 clock
12, 13
10, 11
2, 4, 8
None
None
2, 2.5
Clock
N/A
N/A
128
256
64
2
0
8
4
0
1
29
256MB, 512MB, 1GB, 2GB (x64, DR)
MT16VDDT3264A MT16VDDT6464A MT16VDDT12864A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
0A
A0
80
08
07
0C
02
40
00
04
60
70
75
70
75
00
80
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
0D
0A
A0
80
08
07
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
2
©2004 Micron Technology, Inc.
0D
A0
80
08
07
0B
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
2