MT16HTF25664AY-667EA3 Micron Technology Inc, MT16HTF25664AY-667EA3 Datasheet - Page 15
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MT16HTF25664AY-667EA3
Manufacturer Part Number
MT16HTF25664AY-667EA3
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16HTF6464AY-667B4.pdf
(21 pages)
Specifications of MT16HTF25664AY-667EA3
Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11:
Table 12:
Figure 7:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Select Code
Mode
Memory area select code (two arrays)
Protection register select code
Current address READ
Random address READ
Sequential READ
Byte WRITE
Page WRITE
SDA Out
SDA In
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t
SU:STA
t
F
RW Bit
1
0
1
1
0
0
t
HD:STA
t
t AA
LOW
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
t
t
HIGH
b7
HD:DAT
IL
IL
IL
IL
1
0
Device Type Identifier
Bytes
≤ 16
15
≥ 1
1
1
1
1
b6
0
1
t
DH
t
Initial Sequence
Start, device select, RW = 1
Start, device select, RW = 0, address
Restart, device select, RW = 1
Similar to current or random address READ
Start, device select, RW = 0
Start, device select, RW = 0
R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t
SU:DAT
b4
0
0
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
©2003 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t
SU:STO
t
BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0