MT9HTF6472AY-40ED4 Micron Technology Inc, MT9HTF6472AY-40ED4 Datasheet - Page 41

• Manufacturer Part Number: MT9HTF6472AY-40ED4
• Description: MODULE DDR2 512MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472AY-40ED4

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 60ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.035A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 21:
Table 22:
pdf: 09005aef80e6f860, source: 09005aef80e5b799
HTF9C32_64_128x72AG_2.fm - Rev. C 6/05 EN
Parameter/Condition
Parameter/Condition
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Output Low Voltage: I
Input Leakage Current: V
Output Leakage Current: V
Standby Current
Power Supply Current, READ: SCL clock frequency = 100 KHz
Powr Supply Current, WRITE: SCL clock frequency = 100 KHz
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
Notes: 1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1
OUT
IN
= 3mA
OUT
= GND to V
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
= GND to V
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
and the falling or rising edge of SDA.
write sequence to the end of the EEPROM internal erase/program cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tor, and the EEPROM does not respond to its slave address.
DD
SS
SS
DD
; V
; V
DDSPD
DDSPD
= +1.7V to +3.6V
= +1.7V to +3.6V
41
Symbol
V
DDSPD
I
V
I
V
V
I
CC
I
CC
t
I
LO
SB
OL
WRC) is the time from a valid stop condition of a
LI
IH
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
W
R
t
Symbol
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STO
SU:STA
t
t
t
t
HIGH
LOW
f
WRC
t
t
BUF
SCL
AA
DH
t
t
t
F
R
I
V
DDSPD X
Min
0.10
0.05
-0.6
1.7
1.6
0.4
2
–
Min
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
0.7
0
Serial Presence-Detect
Max
300
400
0.9
0.3
50
10
V
V
DDSPD
DDSPD
Max
3.6
0.4
3
3
4
1
3
Units
+ 0.5
x 0.3
KHz
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
Notes
Units
mA
mA
µA
µA
µA
1
2
2
3
4
V
V
V
V