MT9HVF6472PY-667D1 Micron Technology Inc, MT9HVF6472PY-667D1 Datasheet
MT9HVF6472PY-667D1
Specifications of MT9HVF6472PY-667D1
MT9HVF6472PY-667D1
Related parts for MT9HVF6472PY-667D1
MT9HVF6472PY-667D1 Summary of contents
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... ECC, SR) 240-Pin DDR2 VLP RDIMM DDR2 SDRAM VLP RDIMM MT9HVF3272PY – 256MB MT9HVF6472PY – 512MB MT9HVF12872PY – 1GB Features • 240-pin, registered very low profile, dual in-line memory module, ATCA form factor • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • ...
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... Data sheets for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT9HVF6472PY-667C2. PDF: 09005aef81de9391 hvf9c32_64_128x72py.pdf - Rev. E 03/10 EN ...
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Pin Assignments Table 6: Pin Assignments 240-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 ...
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... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
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Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef81de9391 ...
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Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NC/DQS9# DM/ NU/ CS# DQS DQS# RDQS RDQS# DQ0 DQ DQ1 DQ DQ2 DQ U1 DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS1# DM1/DQS10 ...
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... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 10: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating one bank ...
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Table 10: DDR2 I Specifications and Conditions – 256MB (Continued) DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...
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Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank active-precharge current: t ...
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Table 11: DDR2 I Specifications and Conditions – 512MB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...
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Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...
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Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 1GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...
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Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...
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Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 1GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...
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Register and PLL Specifications Table 14: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...
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Table 15: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...
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Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 17: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
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Module Dimensions Figure 3: 240-Pin DDR2 VLP RDIMM 2.0 (0.079) R (4X) U1 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) TYP 1.0 (0.039) 1.0 (0.039) TYP 70.68 (2.783) U8 Pin 240 3.04 (0.1197) TYP 55.0 (2.165) ...