MT18LSDT6472AY-133D2 Micron Technology Inc, MT18LSDT6472AY-133D2 Datasheet - Page 20
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MT18LSDT6472AY-133D2
Manufacturer Part Number
MT18LSDT6472AY-133D2
Description
MODULE SDRAM 512MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT6472AG-13ED2.pdf
(26 pages)
Specifications of MT18LSDT6472AY-133D2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
SDA OUT
MODE
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 10: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
V IH or V IL
V IH or V IL
V IH or V IL
V IH or V IL
WC
V
V
IL
IL
t HIGH
t HD:DAT
b7
1
0
DEVICE TYPE IDENTIFIER
20
BYTES
1
1
1
16
1
b6
0
1
t DH
t R
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
168-PIN SDRAM UDIMM
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0