C8051T606ZDB Silicon Laboratories Inc, C8051T606ZDB Datasheet - Page 35

CARD DAUGHTER QFN10 SOCKET

C8051T606ZDB

Manufacturer Part Number
C8051T606ZDB
Description
CARD DAUGHTER QFN10 SOCKET
Manufacturer
Silicon Laboratories Inc
Datasheets

Specifications of C8051T606ZDB

Module/board Type
Socket Module - QFN
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051T606
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1668
Table 8.7. Internal High-Frequency Oscillator Electrical Characteristics
V
Table 8.8. Temperature Sensor Electrical Characteristics
V
Table 8.9. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
Input Voltage Range
Input Current
Parameter
Oscillator Frequency
Oscillator Supply Current 
(from V
Power Supply Variance
Temperature Variance
DD
DD
DD
= 1.8 to 3.6 V; T
= 3.0 V, –40 to +85 °C unless otherwise specified.
= 3.0 V; –40 to +85 °C unless otherwise specified.
DD
)
A
= –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Sample Rate = 500 ksps; VREF = 2.5 V
IFCN = 11b
25 °C, V
OSCICN.2 = 1
Constant Temperature
Constant Supply
Temp = 0 °C
Temp = 0 °C
Conditions
DD
Conditions
= 3.0 V,
Conditions
Rev. 1.2
C8051T600/1/2/3/4/5/6
Min
24
Min
Min
±0.02
0
24.5
Typ
450
±20
±0.5
Typ
±80
903
±10
3.2
Typ
12
Max
700
25
Max
Max
V
DD
ppm/°C
mV/°C
Units
µV/°C
Units
MHz
%/V
µA
mV
mV
Units
°C
µA
V
35

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