HIP4080A/81AEVALZ Intersil, HIP4080A/81AEVALZ Datasheet - Page 11

• Manufacturer Part Number: HIP4080A/81AEVALZ
• Description: DEMO BOARD FOR HIP4081A
• Manufacturer: Intersil

Specifications of HIP4080A/81AEVALZ

• Main Purpose: Power Management, H Bridge Driver (Internal FET)
• Utilized Ic / Part: HIP4080A, HIP4081A
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -
• Other names: HIP4080A/81AEVAL; HIP4080A/81AEVAL; Q2670719

Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to
verify that the Application Note or Technical Brief is current before proceeding.
Quick Help Table
The quick help table has been included to help locate
solutions to problems you may have in applying the
HIP4080A.
Low chip bias voltages (V
High chip bias voltages (V
Bootstrap capacitor(s) too small
Bootstrap capacitor(s) too large
R
R
Dead-time too small
HIP4080A IC gets too hot
Lower MOSFETs turn on, but upper MOSFETs
don't
GATE
GATE
too small
too large
PROBLEM
CC
For information regarding Intersil Corporation and its products, see www.intersil.com
CC
and V
and V
11
DD
DD
)
)
May cause power MOSFETs to exhibit excessive R
6V, the IC may not function properly.
At V
heavier V
May cause insufficient or soft charge delivery to MOSFETs at turn-on causing MOSFET overheating.
Charge pump will pump charge, but possibly not quickly enough to avoid excessive switching losses.
Dead-time may need to be increased in order to allow sufficient bootstrap refresh time. The
alternative is to decrease bootstrap capacitance.
Smaller values of R
Incorporating a series gate resistor with an anti-parallel diode can solve EMI problem and add to the
dead time, reducing shoot-through tendency.
Increases switching losses and MOSFET heating. If anti-parallel diode mentioned above is in
backwards, turn-off time is increased, but turn-on time is not, possibly causing a shoot-through fault.
Reduces “refresh” time as well as dead time, with increased shoot-through tendency. Try increasing
HDEL and LDEL resistors (don't exceed 250kΩ).
Reduce bus voltage, switching frequency, choose a MOSFET with lower gate capacitance or reduce
bias voltage (if it is not below 10V to 12V). Shed some of the low voltage gate switching losses in the
HIP4080A by placing a small amount of series resistance in the leads going to the MOSFET gates,
thereby transferring some of the IC losses to the resistors.
Check that the HEN terminal is not tied low inadvertently.
DD
Application Note 9404
voltages above about 12V. The charge pump limiter will begin to operate, in turn drawing
DD
current. Above 16V, breakdown may occur.
GATE
reduces turn-on/off times and may cause excessive emi problems.
EFFECT
DSON
, possibly overheating them. Below about
December 11, 2007
AN9404.3