DSPIC30F3014-20I/ML Microchip Technology, DSPIC30F3014-20I/ML Datasheet - Page 46

• Manufacturer Part Number: DSPIC30F3014-20I/ML
• Description: IC DSPIC MCU/DSP 24K 44QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F3014-20I/ML

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 24KB (8K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFN
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 30
• Flash Memory Size: 24KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F301420IML

dsPIC30F3014/4013
5.6.3
Example 5-2
can be used to load the 96 bytes of write latches.
32 TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the Table Pointer.
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70138G-page 46
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note:
2nd_program_word
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
In
shows a sequence of instructions that
Example
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
INITIATING A PROGRAMMING SEQUENCE
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
5-2, the contents of the upper byte of W3 has no effect.
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
5.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs as shown in
INITIATING THE PROGRAMMING
SEQUENCE
 2010 Microchip Technology Inc.
Example
5-3.