ST10F269Z2Q3 STMicroelectronics, ST10F269Z2Q3 Datasheet - Page 17

• Manufacturer Part Number: ST10F269Z2Q3
• Description: IC FLASH MEM 256KBIT 144-PQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of ST10F269Z2Q3

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 144-QFP
• Processor Series: ST10F26x
• Core: ST10
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: CAN, SSC, USART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 111
• Number Of Timers: 2 x 16 bit
• Operating Supply Voltage: 0.3 V to 4 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16 bit x 10 bit
• Cpu Family: ST10
• Device Core Size: 16b
• Frequency (max): 40MHz
• Total Internal Ram Size: 12KB
• # I/os (max): 111
• Number Of Timers - General Purpose: 5
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Instruction Set Architecture: CISC/RISC
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 144
• Package Type: PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2042

ST10F269
5 - INTERNAL FLASH MEMORY
5.1 - Overview
– 128K or 256K Byte on-chip Flash memory
– Two possibilities of Flash mapping into the CPU
– Flash memory can be used for code and data
– 32-bit, zero waitstate read access (50ns cycle
– Erase-Program Controller (EPC) similar to
– Memory Erase in blocks
Table 2 : 128K or 256K Byte Flash Memory Block Organization
*Not available on 128K versions (reserved areas).
• Word-by-Word Programmable (16 s typical)
• Data polling and Toggle Protocol for EPC
• Ready/Busy signal connected on XP2INT
• Internal Power-On detection circuit
• One 16K Byte, two 8K Byte, one 32K Byte, one
• Each
• Chip erase (8.5 second typical)
• Each block can be separately protected
• Each protected block can be temporary unpro-
• When enabled, the read protection prevents
address space
storage
time at f
62.5ns cycle time at f
devices)
M29F400B STM’s stand-alone Flash memory
Status
interrupt line
to three 64K Byte blocks
(1.5 second typical)
against programming and erasing
tected
access to data in Flash memory using a pro-
gram running out of the Flash memory space.
CPU
Block
block
5*
6*
0
1
2
3
4
= 40MHz on PQFP144 devices and
can
CPU
be
= 32MHz on TQFP144
Addresses (Segment 0)
03’0000h to 03’FFFFh*
04’0000h to 04’FFFFh*
00’0000h to 00’3FFFh
00’4000h to 00’5FFFh
00’6000h to 00’7FFFh
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
erased
separately
Addresses (Segment 1)
– Erase Suspend and Resume Modes
– Single Voltage operation, no need of dedicated
– Low Power Consumption:
– 1000 Erase-Program Cycles per block, 20 years
– Operating temperature: -40 to +125
5.2 - Operational Overview
Read Mode
In standard mode (the normal operating mode)
the Flash appears like an on-chip ROM with the
same timing and functionality. The Flash module
offers a fast access time, allowing zero waitstate
access with CPU frequency up to 40MHz on
PQFP144 devices and up to 32MHz on TQFP144
devices. Instruction fetches and data operand
reads are performed with all addressing modes of
the ST10F269 instruction set.
In order to optimize the programming time of the
internal Flash, blocks of 8K Bytes, 16K Bytes,
32K Bytes, 64K Bytes can be used. But the size of
the blocks does not apply to the whole memory
space, see details in Table 2.
03’0000h to 03’FFFFh*
04’0000h to 04’FFFFh*
01’0000h to 01’3FFFh
01’4000h to 01’5FFFh
01’6000h to 01’7FFFh
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
• Read and Program another Block during erase
• 45mA max. Read current
• 60mA max. Program or Erase current
• Automatic Stand-by-mode (50 A maximum)
Access to data of internal Flash can only be per-
formed with an inner protected program
suspend
supply pin
of data retention time
+125
o
C
5 - INTERNAL FLASH MEMORY
Size (byte)
64K*
64K*
16K
32K
64K
8K
8K
o
C / -40 to
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