MC912D60ACFUE8 Freescale Semiconductor, MC912D60ACFUE8 Datasheet - Page 412
MC912D60ACFUE8
Manufacturer Part Number
MC912D60ACFUE8
Description
IC MCU 16BIT 8MHZ 80-QFP
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet
1.MC912D60ACFUE8.pdf
(460 pages)
Specifications of MC912D60ACFUE8
Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, MI Bus, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
48
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Processor Series
HC912D
Core
HC12
Data Bus Width
16 bit
Data Ram Size
2 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
68
Operating Supply Voltage
3 V to 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC912D60ACFUE8
Manufacturer:
TI
Quantity:
1 000
Company:
Part Number:
MC912D60ACFUE8
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC912D60ACFUE8 IL02H
Manufacturer:
FREESCALE
Quantity:
20 000
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Electrical Specifications
Technical Data
412
ECLK frequency
A-clock frequency
BCLK frequency
Left-aligned PWM frequency
Left-aligned PWM resolution
Center-aligned PWM frequency
Center-aligned PWM resolution
Bytes per row
Read bus clock frequency
Erase time
PGM/ERAS to HVEN set up time
High voltage hold time
High voltage hold time (erase)
Program hold time
Program time
Return to read time
Cumulative program hv period
Row program/erase endurance
Data retention
1. Based on the average life time operating temperature of 70°C.
Selectable
Selectable
8-bit
16-bit
8-bit
16-bit
V
V
DD
DD
Table 20-11. Pulse Width Modulator Characteristics
= 5.0 Vdc ±10%, V
= 5.0 Vdc ±10%, V
Characteristic
Characteristic
Table 20-10. Flash EEPROM Characteristics
SS
SS
Electrical Specifications
= 0 Vdc, T
= 0 Vdc, T
A
A
= T
= T
L
L
to T
to T
H
H
, unless otherwise noted
, unless otherwise noted
Symbol
Symbol
r
f
f
r
f
f
f
lpwm
cpwm
cpwm
t
lpwm
f
t
t
eclk
aclk
bclk
READ
t
t
FPGM
t
ERAS
t
NVHL
NVS
PGS
RCV
t
NVL
—
—
—
HV
f
eclk
f
f
f
eclk
f
eclk
eclk
f
f
eclk
f
eclk
0.004
eclk
eclk
10
MC68HC912D60A — Rev. 3.1
Min
Min
32K
100
100
/256M
/512M
64
10
30
—
8
5
5
1
/128
/128
/1M
/2M
/4K
/4K
(1)
Freescale Semiconductor
Max
8M
f
f
64
40
—
—
—
—
—
Max
eclk
eclk
f
f
f
8
8
f
f
f
8.0
eclk
eclk
eclk
eclk
eclk
eclk
/2
/2
cycles
Units
Bytes
years
ms
ms
Hz
µs
µs
µs
µs
µs
µs
MHz
Unit
Hz
Hz
Hz
Hz
Hz
Hz
Hz
Hz
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