C8051F335-GM Silicon Laboratories Inc, C8051F335-GM Datasheet - Page 60

• Manufacturer Part Number: C8051F335-GM
• Description: IC 8051 MCU 2KB FLASH 20QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F33xr

Specifications of C8051F335-GM

• Program Memory Type: FLASH
• Program Memory Size: 2KB (2K x 8)
• Package / Case: 20-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 17
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F330DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• No. Of I/o's: 17
• Ram Memory Size: 768Byte
• Cpu Speed: 25MHz
• No. Of Timers: 4
• Rohs Compliant: Yes
• Data Rom Size: 128 B
• Height: 0.88 mm
• Length: 4 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Width: 4 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1451 - ADAPTER PROGRAM TOOLSTICK F330
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1269

Table 7.1. Voltage Reference Electrical Characteristics
V
Output Voltage
VREF Short-Circuit Current
VREF Temperature 
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Power Supply Rejection
Input Voltage Range
Input Current
ADC Bias Generator
Reference Bias Generator
DD
= 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass
0.1 µF ceramic bypass
no bypass cap
Sample Rate = 200 ksps; VREF =
3.0 V
BIASE = ‘1’ or AD0EN = ‘1’ or
IOSCEN = ‘1’
REFBE = ‘1’ or TEMPE = ‘1’ or
IDA0EN = ‘1’
External Reference (REFBE = 0)
Internal Reference (REFBE = 1)
Power Specifications
Conditions
Rev. 1.7
C8051F330/1/2/3/4/5
2.38
Min
—
—
—
—
—
—
—
—
—
—
0
2.44
Typ
140
100
0.5
15
20
10
12
40
—
—
2
Max
2.50
V
10
—
—
—
—
—
—
—
—
—
DD
ppm/µA
ppm/°C
ppm/V
Units
mA
ms
µA
µA
µA
µs
µs
V
V
63