DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 306

• Manufacturer Part Number: DF2378BVFQ35WV
• Description: IC H8S/2378 MCU FLASH 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• For Use With: EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
In some synchronous DRAMs provided with a self-refresh mode, the interval between clearing
self-refreshing and the next command is specified. A setting can be made in bits TPCS2 to TPCS0
in REFCR to make the precharge time after self-refreshing from 1 to 7 states longer than the
normal precharge time. In this case, too, normal precharging is performed according to the setting
of bits TPC1 and TPC0 in DRACCR, and therefore a setting should be made to give the optimum
post-self-refresh precharge time, including this time. Figure 6.58 shows an example of the timing
when the precharge time after self-refreshing is extended by 2 states.
Rev.7.00 Mar. 18, 2009 page 238 of 1136
REJ09B0109-0700
Precharge-sel
Address bus
SDRAMφ
CAS
RAS
CKE
WE
(TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0, RLW1 = 0, RLW0 = 0)
φ
PALL
T
Rp
SELF
Figure 6.57 Self-Refresh Timing
T
Rr
Software standby
NOP
T
Rc2