DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 935

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
21.1.4
The user MAT is divided into 64 kbytes (seven blocks), 32 kbytes (one block), and 4 kbytes (eight
blocks) as shown in figure 21.4. The user MAT can be erased in this divided-block units and the
erase-block number of EB0 to EB15 is specified when erasing.
Block Division
Address H'07FFFF
Address H'000000
Figure 21.4 Block Division of User MAT
Address
H'050000
Address
H'030000
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
<User MAT>
4 kbytes
32 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
×
Rev.7.00 Mar. 18, 2009 page 867 of 1136
8
Erase block
EB0
EB7
EB8
EB9
EB10
EB11
EB12
EB13
EB14
EB15
to
REJ09B0109-0700

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