DSPIC33FJ64GS406T-I/MR Microchip Technology, DSPIC33FJ64GS406T-I/MR Datasheet - Page 114

• Manufacturer Part Number: DSPIC33FJ64GS406T-I/MR
• Description: MCU/DSP 16BIT 64KB FLASH 64QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 33Fr

Specifications of DSPIC33FJ64GS406T-I/MR

• Program Memory Type: FLASH
• Program Memory Size: 64KB (64K x 8)
• Package / Case: 64-VQFN
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 40 MIPs
• Connectivity: I²C, IrDA, LIN, SCI, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, QEI, POR, PWM, WDT
• Number Of I /o: 58
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Product: DSCs
• Data Bus Width: 16 bit
• Processor Series: DSPIC33F
• Core: dsPIC
• Numeric And Arithmetic Format: Fixed-Point or Floating-Point
• Instruction Set Architecture: Harvard
• Device Million Instructions Per Second: 40 MIPs
• Maximum Clock Frequency: 120 MHz
• Number Of Programmable I/os: 58
• Data Ram Size: 4 KB
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DM240001, DV164033
• Interface Type: I2C, SPI, UART
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

dsPIC33FJ32GS406/606/608/610 and dsPIC33FJ64GS406/606/608/610
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70591C-page 114
; Set up NVMCON for row programming operations
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 63rd_program_word
2nd_program_word
MOV
MOV
MOV
MOV
MOV
MOV
MOV
TBLWTL W2, [W0]
TBLWTH W3, [W0++]
MOV
MOV
TBLWTL W2, [W0]
TBLWTH W3, [W0++]
MOV
MOV
TBLWTL W2, [W0]
TBLWTH W3, [W0++]
•
•
•
MOV
MOV
TBLWTL W2, [W0]
TBLWTH W3, [W0++]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
#0x4001, W0
W0, NVMCON
#0x0000, W0
W0, TBLPAG
#0x6000, W0
#LOW_WORD_0, W2
#HIGH_BYTE_0, W3
#LOW_WORD_1, W2
#HIGH_BYTE_1, W3
#LOW_WORD_2, W2
#HIGH_BYTE_2, W3
#LOW_WORD_31, W2
#HIGH_BYTE_31, W3
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
LOADING THE WRITE BUFFERS
INITIATING A PROGRAMMING SEQUENCE
Preliminary
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the
; erase command is asserted
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