MC9RS08KB8CSG Freescale Semiconductor, MC9RS08KB8CSG Datasheet - Page 31

• Manufacturer Part Number: MC9RS08KB8CSG
• Description: MCU 8-BIT 8K FLASH 16-SOIC
• Manufacturer: Freescale Semiconductor
• Series: RS08r

Specifications of MC9RS08KB8CSG

• Core Processor: RS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 254 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Processor Series: RS08KB
• Core: RS08
• Data Bus Width: 8 bit
• Data Ram Size: 254 KB
• Interface Type: I2C, SCI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 18
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: DEMO9RS08KB12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Freescale Semiconductor
1
2
3
No.
10
11
12
13
14
15
16
17
18
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
1
2
3
4
5
6
7
8
9
hv
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
PP
C
D
D
C
D
P
P
C
C
D
D
D
D
D
D
D
D
D
C
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
Supply voltage for program/erase
Program/Erase voltage
V
Program
Mass erase
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
PP
to T
Figure
current
Bus
to PGM/MASS setup time
rise time
H
< 10 MHz
= –40 °C to 85 °C
me
PP
34.
& t
3
hold time
Characteristic
hv
applied to device)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3
12 V
Figure 34. Example V
Table 16. Flash Characteristics
2
100 Ω
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
V
t
V
t
t
t
D_ret
t
nvh1
t
prog
t
t
t
Read
t
pgs
nvs
nvh
vps
vph
—
me
vrs
rcv
hv
DD
PP
PP
PP
Filtering
1 nF
power source is recommended. An example V
1000
11.8
Min
500
100
200
2.7
1.8
V
20
10
20
20
15
—
—
—
—
5
5
1
PP
Typical
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Electrical Characteristics
Max
12.2
200
100
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
cycles
hours
years
Unit
ms
ms
μA
μA
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
V
PP
31