MC9S08JS16CFK Freescale Semiconductor, MC9S08JS16CFK Datasheet - Page 8

• Manufacturer Part Number: MC9S08JS16CFK
• Description: IC MCU 8BIT 16K FLASH 24QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08JS16CFK

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: LIN, SCI, SPI, USB
• Peripherals: LVD, POR, PWM
• Number Of I /o: 14
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-QFN
• Processor Series: S08JS
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 512 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 48 MHz
• Number Of Programmable I/os: 14
• Number Of Timers: 1
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08JS16
• Minimum Operating Temperature: - 40 C
• Controller Family/series: HCS08
• No. Of I/o's: 14
• Ram Memory Size: 512Byte
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: SCI, SPI, USB
• Rohs Compliant: Yes
• Package: 24QFN EP
• Family Name: HCS08
• Maximum Speed: 48 MHz
• For Use With: DEMO9S08JS16 - BOARD DEMO FOR JS16 FAMILY
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
3.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
8
ESD Target for Machine Model (MM) — MM circuit
description
ESD Target for Human Body Model (HBM) — HBM
circuit description
D
I/O
D
Num C
1
= P
(at equilibrium) for a known T
I/O
= Power dissipation on input and output pins — user determined
int
is neglected) is:
Equation 1
Equation 1
+ P
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Operating voltage
I/O
P
int
Parameter
and
= I
and
DD
Equation 2
I/O
Equation 2
2
× V
<< P
Parameter
DD
int
K = P
, Watts — chip internal power
MC9S08JS16 Series MCU Data Sheet, Rev. 4
Table 5. ESD Protection Characteristics
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
Table 6. DC Characteristics
× (T
D
= K ÷ (T
A
+ 273°C) + θ
Symbol
V
V
THHBM
THMM
J
+ 273°C)
JA
Symbol
× (P
—
D
A
)
2
.
Min
2.7
Value
2000
200
D
and T
Typical
Equation 3
—
J
can be obtained by
Freescale Semiconductor
1
Max
by measuring
5.5
D
Unit
and T
V
V
Eqn. 2
Eqn. 3
Unit
V
J