R5F21294SNSP#U0 Renesas Electronics America, R5F21294SNSP#U0 Datasheet - Page 388

• Manufacturer Part Number: R5F21294SNSP#U0
• Description: MCU 3/5V 16K+2K 20PIN-SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/29r

Specifications of R5F21294SNSP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.2 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/28 Group, R8C/29 Group
Rev.2.10
REJ09B0279-0210
19.7.1.4
19.7.1.5
19.7.1.6
19.7.1.7
19.7.1.8
Write 0 before writing 1 when setting the FMR01, FMR02, or FMR11 bit to 1. Do not generate an interrupt
between writing 0 and 1.
In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is
stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be
rewritten correctly. In this case, use standard serial I/O mode.
Do not write additions to the already programmed address.
Do not enter stop mode or wait mode during erase-suspend.
To perform programming and erasure, use VCC = 2.7 to 5.5 V as the supply voltage. Do not perform
programming and erasure at less than 2.7 V.
Sep 26, 2008
How to Access
Rewriting User ROM Area
Entering Stop Mode or Wait Mode
Program and Erase Voltage for Flash Memory
Program
Page 369 of 441
19. Flash Memory