HD64F3672FPIV Renesas Electronics America, HD64F3672FPIV Datasheet - Page 115

MCU 3/5V 16K I-TEMP PB-FREE 64-L

HD64F3672FPIV

Manufacturer Part Number
HD64F3672FPIV
Description
MCU 3/5V 16K I-TEMP PB-FREE 64-L
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3672FPIV

Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
26
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
For Use With
R0K436079S000BE - KIT DEV FOR H8/36079 W/COMPILER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Table 7.4
Table 7.5
Table 7.6
Note: Time shown in s.
7.4.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 7.4 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An
Program Data
0
0
1
1
Reprogram Data
0
0
1
1
n
(Number of Writes)
1 to 6
7 to 1,000
register (EBR1). To erase multiple blocks, each block must be erased in turn.
overflow cycle of approximately 19.8 ms is allowed.
Erase/Erase-Verify
Reprogram Data Computation Table
Additional-Program Data Computation Table
Programming Time
30
Verify Data
0
1
0
1
Verify Data
0
1
0
1
Programming
Time
200
Reprogram Data
1
0
1
1
Additional-Program
Data
0
1
1
1
In Additional
Programming
10
Rev.4.00 Nov. 02, 2005 Page 89 of 304
Comments
Programming completed
Reprogram bit
Remains in erased state
Comments
Additional-program bit
No additional programming
No additional programming
No additional programming
Comments
REJ09B0143-0400
Section 7 ROM

Related parts for HD64F3672FPIV