DSPIC30F3010T-20I/SO Microchip Technology, DSPIC30F3010T-20I/SO Datasheet - Page 55

• Manufacturer Part Number: DSPIC30F3010T-20I/SO
• Description: IC DSPIC MCU/DSP 24K 28SOIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F3010T-20I/SO

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 24KB (8K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.0
The Data EEPROM Memory is readable and writable
during normal operation over the entire V
data EEPROM memory is directly mapped in the
program memory address space.
The four SFRs used to read and write the program
Flash memory are used to access data EEPROM
memory, as well. As described in Section 4.0
"Address Generator Units", these registers are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
The EEPROM data memory allows read and write of
single words and 16-word blocks. When interfacing to
data memory, NVMADR, in conjunction with the
NVMADRU register, is used to address the EEPROM
location being accessed. TBLRDL and TBLWTL instruc-
tions are used to read and write data EEPROM. The
dsPIC30F3010/3011 device has 1 Kbyte (512 words) of
data EEPROM, with an address range from 0x7FFC00
to 0x7FFFFE.
A word write operation should be preceded by an erase
of the corresponding memory location(s). The write
typically requires 2 ms to complete, but the write time
will vary with voltage and temperature.
A program or erase operation on the data EEPROM
does not stop the instruction flow. The user is respon-
sible for waiting for the appropriate duration of time
before initiating another data EEPROM write/erase
operation. Attempting to read the data EEPROM while
a programming or erase operation is in progress results
in unspecified data.
© 2005 Microchip Technology Inc.
Note: This data sheet summarizes features of this group
of dsPIC30F devices and is not intended to be a complete
reference source. For more information on the CPU,
peripherals, register descriptions and general device
functionality, refer to the dsPIC30F Family Reference
Manual (DS70046). For more information on the device
instruction set and programming, refer to the dsPIC30F
Programmer’s Reference Manual (DS70030).
DATA EEPROM MEMORY
DD
range. The
Preliminary
Control bit WR initiates write operations, similar to pro-
gram Flash writes. This bit cannot be cleared, only set,
in software. This bit is cleared in hardware at the com-
pletion of the write operation. The inability to clear the
WR bit in software prevents the accidental or
premature termination of a write operation.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set when a write operation is interrupted by a MCLR
Reset, or a WDT Time-out Reset, during normal oper-
ation. In these situations, following Reset, the user can
check the WRERR bit and rewrite the location. The
address register NVMADR remains unchanged.
7.1
A TBLRD instruction reads a word at the current
program word address. This example uses W0 as a
pointer to data EEPROM. The result is placed in
register W4, as shown in Example 7-1.
EXAMPLE 7-1:
MOV
MOV
MOV
TBLRDL [ W0 ], W4
Note:
dsPIC30F3010/3011
Reading the Data EEPROM
W1
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
Interrupt flag bit NVMIF in the IFS0
register is set when write is complete. It
must be cleared in software.
,
TBLPAG
DATA EEPROM READ
; Init Pointer
; read data EEPROM
DS70141B-page 53