MC908AS60ACFN Freescale Semiconductor, MC908AS60ACFN Datasheet - Page 55

• Manufacturer Part Number: MC908AS60ACFN
• Description: IC MCU 60K FLASH 8.4MHZ 52PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908AS60ACFN

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8.4MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 42
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4.5 FLASH-1 Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH-1 memory to read as logic 1:
Freescale Semiconductor
10. Wait for a time, t
1. Set both the ERASE bit and the MASS bit in the FLASH-1 Control Register (FL1CR).
2. Read the FLASH-1 Block Protect Register (FL1BPR).
3. Write to any FLASH-1 address within the FLASH-1 array with any data.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
If the address written to in Step 3 is within address space protected by the
FLASH-1 Block Protect Register (FL1BPR), no erase will occur.
A. Programming and erasing of FLASH locations can not be performed by
code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address within
the FLASH array memory space such as the COP Control Register
(COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
NVS
MERASE
RCV
NVHL
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, after which the memory can be accessed in normal read mode.
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NOTE
NOTE
FLASH-1 Mass Erase Operation
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