LMP7701MF/NOPB National Semiconductor, LMP7701MF/NOPB Datasheet - Page 6

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LMP7701MF/NOPB

Manufacturer Part Number
LMP7701MF/NOPB
Description
IC OP AMP PREC 12V RRIO SOT23-5
Manufacturer
National Semiconductor
Series
LMP®r
Datasheet

Specifications of LMP7701MF/NOPB

Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
1.1 V/µs
Gain Bandwidth Product
2.5MHz
Current - Input Bias
0.2pA
Voltage - Input Offset
37µV
Current - Supply
790µA
Current - Output / Channel
86mA
Voltage - Supply, Single/dual (±)
2.7 V ~ 12 V, ±1.35 V ~ 6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Number Of Channels
1
Voltage Gain Db
130 dB
Common Mode Rejection Ratio (min)
88 dB
Input Voltage Range (max)
12 V
Input Voltage Range (min)
2.7 V
Input Offset Voltage
0.2 mV at 5 V
Output Current (typ)
42 mA
Operating Supply Voltage
3 V, 5 V, 9 V
Supply Current
1 mA at 5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
 Details
Other names
LMP7701MF
LMP7701MFTR
Symbol
Parameter
V
Output Voltage Swing High
OUT
Output Voltage Swing Low
I
Output Current
OUT
(Notes 3, 9)
I
Supply Current
S
SR
Slew Rate (Note 10)
GBW
Gain Bandwidth
THD+N
Total Harmonic Distortion + Noise
e
Input Referred Voltage Noise Density
n
i
Input Referred Current Noise Density
n
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of T
)/ θ
P
= (T
– T
. All numbers apply for packages soldered directly onto a PC Board.
D
J(MAX)
A
JA
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T
= T
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J
A
T
.
A
Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality
Control (SQC) method.
Note 7: This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 8: Positive current corresponds to current flowing into the device.
Note 9: The short circuit test is a momentary test.
Note 10: The number specified is the slower of positive and negative slew rates.
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Conditions
R
= 2 kΩ to 0V
L
LMP7701
R
= 2 kΩ to 0V
L
LMP7702/LMP7704
R
= 10 kΩ to 0V
L
LMP7701
R
= 10 kΩ to 0V
L
LMP7702/LMP7704
R
= 2 kΩ to 0V
L
LMP7701
R
= 2 kΩ to 0V
L
LMP7702/LMP7704
R
= 10 kΩ to 0V
L
LMP7701
R
= 10 kΩ to 0V
L
LMP7702/LMP7704
Sourcing V
= 0V
O
V
= 100 mV (LMP7701)
IN
Sourcing V
= 0V
O
V
= 100 mV (LMP7702/LMP7704)
IN
Sinking V
= 0V
O
V
= −100 mV
IN
LMP7701
LMP7702
LMP7704
A
= +1, V
= 9 V
V
O
PP
10% to 90%
f = 1 kHz, A
= 1, R
= 10 kΩ
V
L
f = 1 kHz
f = 100 kHz
, θ
. The maximum allowable power dissipation at any ambient temperature is
J(MAX)
JA
6
Min
Typ
Max
Units
(Note 6)
(Note 5)
(Note 6)
90
150
170
90
180
290
mV
from V
40
80
100
40
80
150
90
130
150
90
180
290
mV
from V
40
50
60
40
60
110
50
86
35
48
86
mA
33
50
84
35
0.790
1.1
1.3
1.7
2.1
mA
2.5
3.2
4.2
5.0
1.1
V/μs
2.5
MHz
0.02
%
9
nV/
1
fA/
>
J
+

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