MMG3003NT1 Freescale Semiconductor, MMG3003NT1 Datasheet

IC AMP RF GP 3600MHZ 6.2V SOT-89

MMG3003NT1

Manufacturer Part Number
MMG3003NT1
Description
IC AMP RF GP 3600MHZ 6.2V SOT-89
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MMG3003NT1

Current - Supply
180mA
Frequency
40MHz ~ 3.6GHz
Gain
20dB
Noise Figure
4dB
P1db
24dBm
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Rf Type
Cellular, PCS, PHS, WLL
Test Frequency
900MHz
Voltage - Supply
6.2V
Noise Figure Typ
4dB
Supply Current
180mA
Rf Ic Case Style
SOT-89
No. Of Pins
3
Operating Temperature Range
-65°C To +150°C
Frequency Max
3.6GHz
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMG3003NT1
Manufacturer:
FREESCALE
Quantity:
20 000
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
input matched and internally output prematched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 3600 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
Features
• Frequency: 40 - 3600 MHz
• P1dB: 24 dBm @ 900 MHz
• Small - Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single Voltage Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
© Freescale Semiconductor, Inc., 2004-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
1. V
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
The MMG3003NT1 is a General Purpose Amplifier that is internally
Small - Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
Characteristic
(S21)
(S11)
(S22)
Compression
Intercept Point
Select Documentation/Application Notes - AN1955.
CC
= 6.2 Vdc, T
C
= 25°C, 50 ohm system
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
MHz
40.5
- 9.3
900
- 15
Characteristic
20
24
(V
CC
2140
- 14.1
MHz
−14.5
16.9
23.3
40
= 6.2 Vdc, I
3500
- 11.2
- 10.2
MHz
20.5
12
37
CC
dBm
dBm
Unit
= 180 mA, T
dB
dB
dB
C
Table 2. Maximum Ratings
= 25°C)
2. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
R
θJC
Document Number: MMG3003NT1
(2)
MMG3003NT1
CASE 1514 - 02, STYLE 1
40 - 3600 MHz, 20 dB
Symbol
Value
V
InGaP HBT
T
I
P
T
CC
CC
stg
31.6
24 dBm
in
J
PLASTIC
SOT - 89
1 2
(3)
3
- 65 to +150
Value
Rev. 7, 3/2008
400
150
15
MMG3003NT1
7
°C/W
Unit
Unit
dBm
mA
°C
°C
V
1

Related parts for MMG3003NT1

MMG3003NT1 Summary of contents

Page 1

... Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched designed for a broad range of Class A, small - signal, high linearity, general purpose applica- tions suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3003NT1 2 = 6.2 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1B (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3003NT1 3 ...

Page 4

... P , OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 200 150 100 4 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3003NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −10 −20 − Figure 3. Input/Output Return Loss versus 6.2 Vdc 18 CC ...

Page 5

... Vdc 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 10 W Dropping Resistor − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° 6.2 Vdc 6.2 Vdc 180 mA 2140 MHz 1 OUTPUT POWER (dBm) out MMG3003NT1 80 100 150 = 180 ...

Page 6

... Chip Capacitor L1 470 nH Chip Inductor R1 7.5 W Chip Resistor 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. Table 9. Supply Voltage versus R1 Values Supply Voltage 7 R1 Value 4.4 Note: To provide V = 6.2 Vdc and I CC MMG3003NT1 6 V SUPPLY DUT 0.286″ ...

Page 7

... Figure 17. 50 Ohm Test Circuit Schematic V = 6.2 Vdc 180 mA CC 1200 1000 1100 Figure 19. 50 Ohm Test Circuit Component Layout Description C0805C470J5RAC C0805C680J5RAC C0603C103J5RAC 06035J2R7BS HK160822NJ - T RK73B2ATTE7R5J C4 RF OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer Kemet Kemet Kemet AVX Taiyo Yuden KOA Speer MMG3003NT1 7 ...

Page 8

... Chip Capacitor C4 0.01 μF Chip Capacitor (1) C5 1.2 pF Chip Capacitor (1) C6 0.1 pF Chip Capacitor Chip Inductor R1 7.5 W Chip Resistor 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 8 V SUPPLY DUT 0.062″ x 0.058″ Microstrip Z6 0.466″ ...

Page 9

... Figure 23. 50 Ohm Test Circuit Schematic V = 6.2 Vdc 180 mA CC 2600 2700 2800 Figure 25. 50 Ohm Test Circuit Component Layout Description 06035J2R2BS C0805C680J5RAC C0603C103J5RAC 06035J1R2BS HK160839NJ - T RK73B2ATTE7R5J OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer AVX Kemet Kemet AVX Taiyo Yuden KOA Speer MMG3003NT1 9 ...

Page 10

... Chip Capacitors Chip Capacitor C4 0.01 μF Chip Capacitor (1) C5 0.5 pF Chip Capacitor Chip Inductor R1 7.5 W Chip Resistor 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 10 V SUPPLY R1 L1 DUT 0.085″ x 0.058″ Microstrip Z5 0.404″ ...

Page 11

... MMG3003NT1 11 ...

Page 12

... MMG3003NT1 12 50 OHM TYPICAL CHARACTERISTICS (V = 6.2 Vdc 180 mA 25°C, 50 Ohm System) (continued ∠ φ 5.618 57.331 0.061 5.525 55 ...

Page 13

... POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. 7.62 0.305 diameter 2.49 2.54 MMG3003NT1 13 ...

Page 14

... MMG3003NT1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MMG3003NT1 15 ...

Page 16

... MMG3003NT1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MMG3003NT1 17 ...

Page 18

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MMG3003NT1 Document Number: MMG3003NT1 Rev. 7, 3/2008 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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