MHV5IC1810NR2 Freescale Semiconductor, MHV5IC1810NR2 Datasheet

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MHV5IC1810NR2

Manufacturer Part Number
MHV5IC1810NR2
Description
IC RF POWER AMP 5W 28V 16-PFP
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MHV5IC1810NR2

Current - Supply
90mA
Frequency
1.8GHz ~ 1.99GHz
Gain
29dB
P1db
10W
Package / Case
16-PFP
Rf Type
Cellular, GSM, DCS, EDGE
Voltage - Supply
28V
Manufacturer's Type
Power Amplifier
Number Of Channels
1
Frequency (max)
1.99GHz
Operating Supply Voltage (min)
24V
Operating Supply Voltage (typ)
28V
Operating Supply Voltage (max)
32V
Package Type
PFP
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MHV5IC1810NR2
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
MHV5IC1810NR2
Quantity:
622
© Freescale Semiconductor, Inc., 2006, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
matching that makes it usable from 1805 to 1990 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two--Tone Performance: V
Driver Application
• Typical GSM EDGE Performance: V
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 W CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• On--Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
• On--Chip Current Mirror g
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel.
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MHV5IC1810N wideband integrated circuit is designed with on--chip
90 mA, P
1930--1990 MHz)
95 mA, P
1930--1990 MHz)
Output Power
P
and Common Source Parameters
with Enable/Disable Function
out
Select Documentation/Application Notes -- AN1987.
Power Gain — 29 dB
Power Added Efficiency — 29%
IMD — --34 dBc
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = --67 dBc
Spectral Regrowth @ 600 kHz Offset = --76 dBc
EVM — 1.1% rms
.
V
V
V
V
V
RF
RD1
RG1
GS1
GS2
DS1
out
out
in
= 5 Watts Avg., Full Frequency Band (1805--1880 MHz or
= 35 dBm, Full Frequency Band (1805--1880 MHz or
Figure 1. Functional Block Diagram
Temperature Compensation
m
Quiescent Current
Reference FET for Self Biasing Application
DD
DD
2 Stage IC
= 28 Volts, I
= 28 Volts, I
DQ1
DQ1
= 120 mA, I
= 105 mA, I
DQ2
V
DQ2
DS2
=
/RF
(1)
=
out
Document Number: MHV5IC1810N
INTEGRATED POWER AMPLIFIER
Note: Exposed backside flag is source
1805- -1990 MHz, 5 W AVG., 28 V
V
V
V
GND
V
V
RF
MHV5IC1810NR2
RD1
RG1
GS1
GS2
DS1
NC
in
RF LDMOS WIDEBAND
Figure 2. Pin Connections
terminal for transistors.
1
2
3
4
5
6
7
8
GSM/GSM EDGE
16
CASE 978- -03
PLASTIC
(Top View)
PFP- -16
1
MHV5IC1810NR2
Rev. 1, 3/2011
16
15
14
13
12
10
11
9
NC
V
V
V
V
V
V
NC
DS2
DS2
DS2
DS2
DS2
DS2
/RF
/RF
/RF
/RF
/RF
/RF
out
out
out
out
out
out
1

Related parts for MHV5IC1810NR2

MHV5IC1810NR2 Summary of contents

Page 1

... INTEGRATED POWER AMPLIFIER 16 1 CASE 978- -03 PFP- -16 PLASTIC / DS2 out RD1 V / DS2 out RG1 /RF DS1 DS2 out GND 5 V /RF 12 DS2 out V / DS2 out /RF GS1 DS2 out GS2 (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MHV5IC1810NR2 1 ...

Page 2

... W Avg., 1805--1880 MHz or 1930--1990 MHz EDGE Modulation out Power Gain Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. MHV5IC1810NR2 2 Stage 1, 28 Vdc 120 mA DQ1 Stage 2, 28 Vdc DQ2 ...

Page 3

... W Avg., 1805--1990 MHz Power Gain Power Added Efficiency Input Return Loss RF Device Data Freescale Semiconductor continued) = 25°C unless otherwise noted Symbol = 28 Vdc PAE IRL Min Typ Max Unit = 120 mA mA DQ1 DQ2 out — 29 — dB — 19 — % — --13 — dB MHV5IC1810NR2 3 ...

Page 4

... Microstrip Z5 0.127″ x 0.122″ Microstrip Z6 0.355″ x 0.084″ Microstrip Figure 3. MHV5IC1810NR2 Test Circuit Schematic — 1930- -1990 MHz Table 6. MHV5IC1810NR2 Test Circuit Component Designations and Values — 1930- -1990 MHz Part Chip Capacitor C3, C4, C5, C6 8.2 pF Chip Capacitors ...

Page 5

... C3 C7 Figure 4. MHV5IC1810NR2 Test Circuit Component Layout — 1930- -1990 MHz RF Device Data Freescale Semiconductor C10 C5 C13 C2 C12 C4 MHV5IC1810N Rev GS1 GS2 C11 C9 C14 C6 C15 MHV5IC1810NR2 5 ...

Page 6

... DQ2 DQ2 Vdc DD 26 Center Frequency = 1960 MHz 100 kHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 7. Two- -Tone Power Gain versus Output Power MHV5IC1810NR2 Vdc (Avg.) DD out I = 120 mA DQ1 DQ2 100 kHz Tone Spacing IMD 1920 1940 1960 1980 f, FREQUENCY (MHz) Figure 5 ...

Page 7

... Figure 11. Power Gain versus Output Power Vdc Avg 120 mA out DQ1 DQ2 Two--Tone Measurements, Center Frequency = 1960 MHz T = --30_C C 25_C 85_C 1850 1900 1950 f, FREQUENCY (MHz) Figure 12. Power Gain versus Frequency Actual 120 DQ1 DQ2 f = 1960 MHz OUTPUT POWER (WATTS) CW out = 90 mA 2000 MHV5IC1810NR2 ...

Page 8

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D Figure 15. MTTF Factor versus Junction Temperature MHV5IC1810NR2 8 --45 50 --50 25_C 40 --55 ...

Page 9

... Microstrip Z6 0.095″ x 0.084″ Microstrip Z7 0.260″ x 0.085″ Microstrip Figure 17. MHV5IC1810NR2 Test Circuit Schematic — 1805- -1880 MHz Table 7. MHV5IC1810NR2 Test Circuit Component Designations and Values — 1805- -1880 MHz Part C1 0.8 pF Chip Capacitor Chip Capacitor C3, C4, C5 ...

Page 10

... Figure 18. MHV5IC1810NR2 Test Circuit Component Layout — 1805- -1880 MHz MHV5IC1810NR2 C10 C5 C2 C13 C12 C4 MHV5IC1810N Rev GS1 GS2 C11 Device Data Freescale Semiconductor ...

Page 11

... DQ2 -- 1840 MHz SR @ 600 kHz 10 EDGE Modulation --80 0 --85 100 0.1 Figure 20. Spectral Regrowth at 400 and 600 kHz 25_C 25_C T = 85_C Vdc --30_C 105 mA DQ1 85_C DQ2 f = 1840 MHz EDGE Modulation --30_C OUTPUT POWER (WATTS) AVG. out versus Output Power MHV5IC1810NR2 100 11 ...

Page 12

... MHz f = 1800 MHz Figure 21. Series Equivalent Input and Load Impedance MHV5IC1810NR2 Ω load f = 2000 MHz f = 1800 MHz Vdc 120 mA mA Avg. DD DQ1 DQ2 out load MHz Ω Ω 1800 43.82 + j6.83 3.49 + j8.58 1820 43.67 + j7.10 3.43 + j8.96 1840 43.50 + j7.34 3 ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MHV5IC1810NR2 13 ...

Page 14

... MHV5IC1810NR2 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MHV5IC1810NR2 15 ...

Page 16

... Figs. 3 and 17, Test Circuit Schematic, redrawn to reflect correct trace lengths and trace length measurements • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers • Added Product Documentation and Revision History MHV5IC1810NR2 16 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 17

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2011. All rights reserved. MHV5IC1810NR2 17 ...

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