MW7IC2240NBR1 Freescale Semiconductor, MW7IC2240NBR1 Datasheet

IC PWR AMP RF 4W TO-272-16

MW7IC2240NBR1

Manufacturer Part Number
MW7IC2240NBR1
Description
IC PWR AMP RF 4W TO-272-16
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MW7IC2240NBR1

Current - Supply
420mA
Frequency
2.11GHz ~ 2.17GHz
Gain
30dB
P1db
40W
Package / Case
TO-272-16
Rf Type
W-CDMA
Test Frequency
2.14GHz
Voltage - Supply
32V
Channel Type
N
Drain Source Voltage (max)
65V
Output Power (max)
4W
Power Gain (typ)@vds
28dB
Frequency (min)
2GHz
Frequency (max)
2.2GHz
Package Type
TO-272 WB EP
Pin Count
16
Operating Temp Range
-65C to 225C
Mounting
Surface Mount
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC2240NBR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MW7IC2240NBR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
matching that makes it usable from 1805 to 1990 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts
• Typical P
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
The MW7IC2040N wideband integrated circuit is designed with on - chip
130 mA, I
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
CW P
430 mA, P
P
and Common Source S - Parameters
Disable Function
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
out
Power Gain — 31 dB
Power Added Efficiency — 50%
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
Power Gain — 33 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1.5% rms
V
V
V
V
RF
= 40 Watts CW, 1805 - 1880 MHz and 1930 - 1990 MHz
GS1
GS2
DS1
DS1
out
in
.
out
DQ2
out
@ 1 dB Compression Point ' 30 Watts CW
= 16 Watts Avg., 1805 - 1880 MHz
= 330 mA, P
(1)
Figure 1. Functional Block Diagram
Temperature Compensation
out
DD
= 4 Watts Avg., f = 1932.5, Channel
Quiescent Current
= 28 Volts, I
DD
= 28 Volts, I
DQ1
(1)
= 90 mA, I
DD
out
DQ1
= 28 Volts, I
)
= 90 mA, I
DQ2
= 430 mA,
DQ1
DQ2
RF
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
=
out
=
/V
DS2
SINGLE W - CDMA, GSM EDGE, GSM
Note: Exposed backside of the package is
INTEGRATED POWER AMPLIFIERS
MW7IC2040NBR1
MW7IC2040NR1
Document Number: MW7IC2040N
TO - 270 WB - 16
TO - 272 WB - 16
1930 - 1990 MHz, 1805 - 1880 MHz,
CASE 1886 - 01
CASE 1329 - 09
MW7IC2040GNR1
MW7IC2040NBR1
PLASTIC
PLASTIC
V
V
V
V
MW7IC2040NR1
GND
V
V
GND
Figure 2. Pin Connections
RF
the source terminal for the transistors.
DS1
GS2
GS1
GS1
GS2
DS1
NC
NC
RF LDMOS WIDEBAND
in
4 W AVG., 28 V
10
11
1
2
3
4
5
6
7
8
9
(Top View)
TO - 270 WB - 16 GULL
MW7IC2040GNR1
CASE 1887 - 01
Rev. 1, 11/2009
16
15
14
13
12
PLASTIC
GND
NC
NC
GND
RF
out
/V
DS2
1

Related parts for MW7IC2240NBR1

MW7IC2240NBR1 Summary of contents

Page 1

... Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor ...

Page 2

... Class 1B (Minimum) A (Minimum) III (Minimum) Package Peak Temperature Unit 260 °C Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc 1.2 2 2.7 Vdc — 2.7 — Vdc 13 14.5 16 Vdc (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol I ...

Page 4

... Vdc, DD — 30 — dB — 33 — % — 1.5 — % rms — — dBc — — dBc = 28 Vdc mA, DD DQ1 — 31 — dB — 50 — % — — dB — 45 — Device Data Freescale Semiconductor ...

Page 5

... C6, C7, C8, C9, C10, C11 10 μ Chip Capacitors C12 2.2 μ Chip Capacitor C13 470 μ Electrolytic Capacitor, Radial C14, C16 0.8 pF Chip Capacitors C15 1 pF Chip Capacitor C17, C18 1 μ Chip Capacitors R1, R2 5.6 KΩ, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor 1 DUT ...

Page 6

... C14 TO272WB−16 MW7IC2040N Rev Figure 4. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930 - 1990 MHz MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 6 C3 C11 C1 C2 C10 C4 C12 C13 C17 C6 C7 C15 C16 C18 RF Device Data Freescale Semiconductor ...

Page 7

... Figure 6. Power Gain versus Output Power @ I = 130 mA DQ1 −10 −20 −30 −40 −50 −60 1 Figure 8. Intermodulation Distortion Products RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS PAE Vdc (Avg.), I DD out DQ1 I = 330 mA, Single−Carrier W−CDMA, 3.84 MHz DQ2 Channel Bandwidth, Input Signal PAR = 7.5 dB ...

Page 8

... FREQUENCY (MHz) Figure 11. Broadband Frequency Response −10 65 ACPR 55 −20 −30 45 PAE −40 35 −50 25 −60 15 − −10 50 85_C 45 −16 40 −22 −30_C 35 −28 − −40 − −52 −58 10 − −4 −8 −12 −16 −20 2300 2400 RF Device Data Freescale Semiconductor ...

Page 9

... Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 45.2% Clipping, Single - Carrier Test Signal RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 2nd Stage 1st Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Vdc Avg ...

Page 10

... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured from load drain to ground. Output Device Matching Under Test Network load = 10 Ω 1880 MHz = 4 W Avg. RF Device Data Freescale Semiconductor ...

Page 11

... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 49.30 + j8.40 Figure 16. Pulsed CW Output Power versus Input Power @ 1930 MHz RF Device Data Freescale Semiconductor 53 52 Ideal 51 50 P1dB = 47.37 dBm ( Actual ...

Page 12

... RF Device Data Freescale Semiconductor ...

Page 13

... Chip Capacitors C6, C7, C8, C9, C10, C11 10 μ Chip Capacitors C12 2.2 μ Chip Capacitor C13 470 μ Electrolytic Capacitor, Radial C14, C15, C16 1 pF Chip Capacitors R1, R2 5.6 KΩ, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor W - CDMA — 1805 - 1880 MHz 1 DUT ...

Page 14

... C14 TO272WB−16 MW7IC2040N Rev Figure 19. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805 - 1880 MHz MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 CDMA — 1805 - 1880 MHz C3 C11 C1 C2 C10 C4 C12 C13 C6 C7 C15 C16 Device Data Freescale Semiconductor ...

Page 15

... V Chip Capacitors C12 2.2 μ Chip Capacitor C13 470 μ Electrolytic Capacitor, Radial C14 0.8 pF Chip Capacitor C15 1 pF Chip Capacitor C16 1.2 pF Chip Capacitor R1, R2 5.6 KΩ, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor GSM EDGE — 1805 - 1880 MHz 1 DUT ...

Page 16

... C14 TO272WB−16 MW7IC2040N Rev Figure 21. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1805 - 1880 MHz MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 16 GSM EDGE — 1805 - 1880 MHz C3 C11 C1 C2 C10 C4 C12 C13 C6 C7 C15 C16 Device Data Freescale Semiconductor ...

Page 17

... C6, C7, C8, C9, C10, C11 10 μ Chip Capacitors C12 2.2 μ Chip Capacitor C13 470 μ Electrolytic Capacitor, Radial C14 0.5 pF Chip Capacitor C15, C16 0.8 pF Chip Capacitors R1, R2 5.6 KΩ, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor GSM EDGE — 1930 - 1990 MHz 1 DUT ...

Page 18

... TO272WB−16 MW7IC2040N Rev Figure 23. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 1930 - 1990 MHz MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 18 GSM EDGE — 1930 - 1990 MHz C11 C1 C14 C2 C10 C12 C13 C15 C16 Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 19 ...

Page 20

... MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 20 RF Device Data Freescale Semiconductor ...

Page 21

... RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 21 ...

Page 22

... MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 22 RF Device Data Freescale Semiconductor ...

Page 23

... RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 23 ...

Page 24

... MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 24 RF Device Data Freescale Semiconductor ...

Page 25

... RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 25 ...

Page 26

... MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 26 RF Device Data Freescale Semiconductor ...

Page 27

... RF Device Data Freescale Semiconductor MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 27 ...

Page 28

... Fig. 14, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 28 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 29

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

Related keywords