MD7IC21100NBR1 Freescale Semiconductor, MD7IC21100NBR1 Datasheet - Page 2

• Manufacturer Part Number: MD7IC21100NBR1
• Description: IC PWR AMP RF 2170MHZ TO-272-14
• Manufacturer: Freescale Semiconductor

Specifications of MD7IC21100NBR1

• Current - Supply: 925mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 28.5dB
• P1db: 110W
• Package / Case: TO-272-14
• Rf Type: W-CDMA
• Voltage - Supply: 32V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -

2
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
(Case Temperature 76°C, 32 W CW)
(Case Temperature 76°C, 32 W CW)
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Each side of device measured separately.
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
DD
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
D
DQ1A
DQ1A
GS
GS
DS
= 50 μAdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= I
= I
DQ1B
DQ1B
Test Methodology
Characteristic
(4)
(4)
Test Methodology
= 190 mAdc)
= 190 mAdc, Measured in Functional Test)
(1,2)
Characteristic
(T
Rating
C
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1A
DQ2A
= I
= I
DQ1B
DQ2B
= 190 mA
= 925 mA
Symbol
Rating
V
V
V
I
I
I
GS(th)
GS(Q)
GG(Q)
DSS
DSS
GSS
3
Symbol
Symbol
Package Peak Temperature
V
R
Min
V
V
5.5
T
—
—
—
—
T
P
T
1
DSS
stg
θJC
GS
DD
C
in
J
1C (Minimum)
III (Minimum)
A (Minimum)
260
Typ
2.9
6.3
—
—
—
2
Class
- 65 to +150
Value
Freescale Semiconductor
- 0.5, +6.0
- 0.5, +65
32, +0
Value
150
225
2.7
0.7
29
(2,3)
Max
10
—
1
1
3
7
RF Device Data
(continued)
°C/W
dBm
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C