IC RF PWR AMP 26V 900MW 1.5-PLD

MW4IC001NR4

Manufacturer Part NumberMW4IC001NR4
DescriptionIC RF PWR AMP 26V 900MW 1.5-PLD
ManufacturerFreescale Semiconductor
TypePower Amplifier
MW4IC001NR4 datasheet
 

Specifications of MW4IC001NR4

Current - Supply12mAFrequency800MHz ~ 2.1GHz
Gain13dBP1db850mW
Package / CasePLD-1.5Rf TypeCellular, CDMA, EDGE, GSM, TDMA, W-CDMA
Test Frequency2.17GHzVoltage - Supply26V
Number Of Channels1Frequency (max)2.17GHz
Power Supply RequirementSingleSingle Supply Voltage (min)26V
Single Supply Voltage (max)28VDual Supply Voltage (min)Not RequiredV
Dual Supply Voltage (typ)Not RequiredVDual Supply Voltage (max)Not RequiredV
Pin Count3MountingSurface Mount
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
16
Page 1/16

Download datasheet (657Kb)Embed
Next
Freescale Semiconductor
Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, I
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC001MR4
12
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
INTEGRATED POWER AMPLIFIER
= 12 mA
DQ
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Symbol
R
θJC
Rating
Package Peak Temperature
3
MW4IC001MR4
Rev. 4, 5/2006
W - CDMA
RF LDMOS WIDEBAND
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Value
Unit
- 0.5, +65
Vdc
- 0.5, +15
Vdc
4.58
W
0.037
W/°C
- 65 to +150
°C
150
°C
Value
Unit
27.3
°C/W
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Unit
260
°C
RF Device Data
Freescale Semiconductor

MW4IC001NR4 Summary of contents

  • Page 1

    ... Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF LDMOS Wideband Integrated Power Amplifier The MW4IC001M wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology ...

  • Page 2

    ... DQ Common - Source Amplifier Power Gain ( Vdc 0 out DQ Drain Efficiency ( Vdc 0 out DQ Input Return Loss ( Vdc 0 out DQ RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V DS(on oss = 0 Vdc rss ...

  • Page 3

    ... T491X226K035AS 100B4R7CP500X 27271SL 100B2R7CP500X 100B3R3CP500X 0805 Series 1008 Series CRCW12061001F100 CRCW120620R0F100 OUTPUT Z10 Z11 Z12 Z13 C5 C11 C13 C12 = 3.5 r Part Number Manufacturer Kemet ATC ATC Kemet ATC Johanson ATC ATC AVX ATC Dale Dale RF Device Data Freescale Semiconductor ...

  • Page 4

    ... MW4IC001MR4 900 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. ...

  • Page 5

    ... OUTPUT POWER (WATTS) PEP out Figure 5. Intermodulation Distortion versus Output Power Vdc DS 10 MHz MHz f1 = 880 MHz Tone Spacing Two −Tone Measurement 0 OUTPUT POWER (WATTS) PEP out Figure 7. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor = 28 Vdc 10 10 ...

  • Page 6

    ... MW4IC001MR4 1990 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. ...

  • Page 7

    ... Tone Spacing 0 OUTPUT POWER (WATTS) PEP out Figure 12. Intermodulation Distortion versus Output Power 10 MHz 1 MHz Vdc 1990 MHz Tone Spacing 100 kHz Two −Tone Measurement 0 OUTPUT POWER (WATTS) PEP out Figure 14. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor 1 1 ...

  • Page 8

    ... MW4IC001MR4 2170 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. ...

  • Page 9

    ... MHz −40 −45 1 0.01 Figure 21. Third Order Intermodulation −13 −18 −23 −28 −33 2170 OUTPUT POWER (WATTS) PEP out Output Power = 28 Vdc 10 MHz 100 kHz 0 OUTPUT POWER (WATTS) PEP out Distortion versus Output Power RF Device Data Freescale Semiconductor 1 1 ...

  • Page 10

    ... Figure 22. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 900 MHz f =860 MHz mA 0.9 W PEP DD DQ out source load MHz Ω Ω 860 27.853 + j5.908 15.492 + j63.669 15.592 + j68.687 865 28.617 + j6.078 870 29.458 + j6.285 15.788 + j69.799 875 30 ...

  • Page 11

    ... Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Test Network Z Z source load RF Device Data Freescale Semiconductor ...

  • Page 12

    ... RF Device Data Freescale Semiconductor NOTES MW4IC001MR4 23 ...

  • Page 13

    ... MW4IC001MR4 24 NOTES RF Device Data Freescale Semiconductor ...

  • Page 14

    ... RF Device Data Freescale Semiconductor NOTES MW4IC001MR4 25 ...

  • Page 15

    ... P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 R 0.200 0.210 5.08 5.33 S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 ZONE V 0.000 0.021 0.00 0.53 ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25 RF Device Data Freescale Semiconductor ...

  • Page 16

    ... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...