IC PWR AMP RF 28V 30W TO-272-16

MW4IC2230MBR1

Manufacturer Part NumberMW4IC2230MBR1
DescriptionIC PWR AMP RF 28V 30W TO-272-16
ManufacturerFreescale Semiconductor
TypePower Amplifier
MW4IC2230MBR1 datasheet
 

Specifications of MW4IC2230MBR1

Current - Supply60mAFrequency1.6GHz ~ 2.4GHz
Gain31dBPackage / CaseTO-272-16
Rf TypeCellular, CDMA, EDGE, GSM, TDMA, W-CDMAVoltage - Supply26V
Number Of Channels1Power Supply RequirementSingle
Single Supply Voltage (min)26VSingle Supply Voltage (max)28V
Dual Supply Voltage (min)Not RequiredVDual Supply Voltage (typ)Not RequiredV
Dual Supply Voltage (max)Not RequiredVPin Count16
MountingScrewLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Noise Figure-P1db-
Test Frequency-  
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Freescale Semiconductor
Technical Data
Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230M wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
• Typical Single - Carrier W - CDMA Performance:
60 mA, I
= 350 mA, P
= 5 Watts Avg., f = 2140 MHz, Channel
DQ2
out
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical Single - Carrier W - CDMA Performance:
60 mA, I
= 350 mA, P
= 0.4 Watts Avg., f = 2140 MHz, Channel
DQ2
out
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
P
.
out
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror g
Reference FET for Self Biasing Application
m
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
RD1
V
RG1
V
DS2
V
DS1
RF
in
V
GS1
Quiescent Current
V
GS2
Temperature Compensation
V
GS3
Figure 1. Functional Block Diagram
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
=
V
DQ1
DD
= 28 Volts, I
=
V
DQ1
DD
(1)
3 Stages I
C
V
/RF
DS3
out
Document Number: MW4IC2230
Rev. 5, 5/2006
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
1
GND
16
GND
V
2
DS2
15
V
3
RD1
V
4
RG1
V
5
DS1
V
DS3/
RF
in
6
14
RF
out
7
V
8
GS1
V
9
GS2
V
10
13
GS3
12
GND
11
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
MW4IC2230MBR1 MW4IC2230GMBR1
1

MW4IC2230MBR1 Summary of contents

  • Page 1

    ... TO - 272 PLASTIC MW4IC2230MBR1 CASE 1329A - 272 GULL PLASTIC MW4IC2230GMBR1 1 GND 16 GND V 2 DS2 RD1 V 4 RG1 V 5 DS1 V DS3 out GS1 V 9 GS2 GS3 12 GND 11 GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MW4IC2230MBR1 MW4IC2230GMBR1 1 ...

  • Page 2

    ... Part - to - Part Phase Variation 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW4IC2230MBR1 MW4IC2230GMBR1 2 Stage 1 Stage 2 Stage 3 Rating 3 = 25° ...

  • Page 3

    ... Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 245 mA 2112.5 MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz, DQ3 G ps IM3 ACPR IRL Min Typ Max Unit = 28 Vdc, DD — 31.5 — dB — — dBc — — dBc — — dB MW4IC2230MBR1 MW4IC2230GMBR1 3 ...

  • Page 4

    ... Microstrip Z4 0.350″ x 0.240″ Microstrip Z5 0.420″ x 0.090″ Microstrip Figure 3. MW4IC2230MBR1(GMBR1) Test Circuit Schematic Table 6. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values Part C1, C2, C3 μ Tantalum Capacitors C5, C6, C7, C8, C12 8.2 pF 100B Chip Capacitors C9, C10 1 ...

  • Page 5

    ... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

  • Page 6

    ... FREQUENCY (MHz) Figure 6. Single - Carrier W - CDMA Wideband Performance @ dBm out out 29 I DQ1 2−Carrier W−CDMA 28 27 2050 Figure Carrier W - CDMA Wideband Performance MW4IC2230MBR1 MW4IC2230GMBR1 6 TYPICAL CHARACTERISTICS = 28 Vdc = 26 dBm (Avg mA 350 mA 265 mA DQ2 DQ3 2100 2150 2200 f, FREQUENCY (MHz) Performance @ dBm out 0 − ...

  • Page 7

    ... Divide 2 MTTF factor by I for MTTF in a particular application Vdc, Small Signal mA 350 mA 265 mA DQ1 DQ2 DQ3 2000 2050 2100 2150 2200 2250 f, FREQUENCY (MHz) Figure 10. Delay versus Frequency 170 180 190 2 MW4IC2230MBR1 MW4IC2230GMBR1 2300 7 ...

  • Page 8

    ... Z * load f = 2230 MHz f = 2050 MHz MHz 2050 2110 2140 2170 2230 load Figure 12. Series Equivalent Input and Load Impedance MW4IC2230MBR1 MW4IC2230GMBR1 2050 MHz f = 2230 MHz = 50 Ω mA 350 mA 265 mA, P DQ1 DQ2 DQ3 load Ω 42.18 + j1.49 8.52 - j0.46 41.06 - j1.30 8.58 - j0.20 40 ...

  • Page 9

    ... RF Device Data Freescale Semiconductor NOTES MW4IC2230MBR1 MW4IC2230GMBR1 9 ...

  • Page 10

    ... MW4IC2230MBR1 MW4IC2230GMBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

  • Page 11

    ... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 11 ...

  • Page 12

    ... MW4IC2230MBR1 MW4IC2230GMBR1 12 RF Device Data Freescale Semiconductor ...

  • Page 13

    ... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 13 ...

  • Page 14

    ... MW4IC2230MBR1 MW4IC2230GMBR1 14 RF Device Data Freescale Semiconductor ...

  • Page 15

    ... RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 15 ...

  • Page 16

    ... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC2230MBR1 MW4IC2230GMBR1 Document Number: MW4IC2230 Rev. 5, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...