MW4IC915GMBR1 Freescale Semiconductor, MW4IC915GMBR1 Datasheet

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MW4IC915GMBR1

Manufacturer Part Number
MW4IC915GMBR1
Description
IC PWR AMP RF 26V 15W TO272-16GW
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW4IC915GMBR1

Current - Supply
60mA
Frequency
750MHz ~ 1GHz
Gain
30dB
Package / Case
TO-272-16 Gull Wing
Rf Type
Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
Voltage - Supply
26V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
P1db
-
Test Frequency
-
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage
structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance: V
Driver Application
• Typical GSM/GSM EDGE Performances: V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
• On - Chip Current Mirror g
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
P
I
and 921 - 960 MHz)
Output Power
Enable/Disable Function
DQ2
Select Documentation/Application Notes - AN1987.
out
Power Gain — 30 dB
Power Added Efficiency — 44%
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 65 dBc
Spectral Regrowth @ 600 kHz Offset = - 83 dBc
EVM — 1.5%
= 15 Watts CW, Full Frequency Band (860 - 960 MHz)
= 240 mA, P
V
V
V
V
V
V
V
RF
RD1
RG1
RD2
RG2
GS1
GS2
DS1
in
out
Figure 1. Functional Block Diagram
Replaced by MW4IC915NBR1(GNBR1). There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free terminations.
= 3 Watts Avg., Full Frequency Band (869 - 894 MHz
DD
Temperature Compensation
m
= 26 Volts, I
Quiescent Current
Reference FET for Self Biasing Application
DQ1
= 60 mA, I
DD
= 26 Volts, I
DQ2
= 240 mA,
DQ1
= 60 mA,
V
DS2
(1)
/RF
out
INTEGRATED POWER AMPLIFIERS
Note: Exposed backside flag is source
MW4IC915GMBR1
MW4IC915MBR1 MW4IC915GMBR1
MW4IC915MBR1
GSM/GSM EDGE, N - CDMA
860 - 960 MHz, 15 W, 26 V
V
V
V
V
V
V
GND
V
GND
RF
RD2
RG2
RD1
RG1
GS1
GS2
DS1
RF LDMOS WIDEBAND
NC
Figure 2. Pin Connections
in
terminal for transistors.
TO - 272 WB - 16 GULL
MW4IC915GMBR1
MW4IC915MBR1
CASE 1329A - 03
TO - 272 WB - 16
CASE 1329 - 09
10
11
1
2
3
4
5
6
7
8
9
PLASTIC
PLASTIC
(Top View)
16
15
14
13
12
Rev. 6, 5/2006
MW4IC915
GND
NC
RF
V
NC
GND
DS2
out/
1

Related parts for MW4IC915GMBR1

MW4IC915GMBR1 Summary of contents

Page 1

... MW4IC915MBR1 CASE 1329A - 272 GULL PLASTIC MW4IC915GMBR1 GND 1 GND RD2 RG2 V 4 DS1 V 5 RD1 RF out DS2 V 7 RG1 V 8 GS1 V 9 GS2 GND GND 12 11 (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MW4IC915MBR1 MW4IC915GMBR1 1 ...

Page 2

... MHz 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two - Tone Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW4IC915MBR1 MW4IC915GMBR1 2 Stage 1, 26 Vdc Stage 2, 26 Vdc 240 mA ...

Page 3

... I = 240 mA, DQ1 DQ2 — 20 — — 30 — — 44 — — — — 1.5 — — — — — MW4IC915MBR1 MW4IC915GMBR1 Unit % dB ° ns ° Watts rms dBc dBc 3 ...

Page 4

... Chip Capacitors C3, C4, C7, C10, C16 22 pF Chip Capacitors C12, C13 10 pF Chip Capacitors C15 10 mF Tantalum Chip Capacitor L1 12.5 nH Inductor M1, M2, M3, M4 0.283″, 90_ Mitered Microstrip Bends R1 kΩ, 1/4 W Chip Resistor (1206) MW4IC915MBR1 MW4IC915GMBR1 Quiescent Current Temperature Compensation ...

Page 5

... PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC915MBR1(GMBR1) Test Fixture Component Layout RF Device Data Freescale Semiconductor C1 V DS1 MW4IC915MB Rev 0 C2 C11 C3 C10 L1 C12 C13 GS2 R2 V DS2 C14 C15 C16 MW4IC915MBR1 MW4IC915GMBR1 5 ...

Page 6

... C5, C10, C12, C14 10 nF Chip Capacitors (0805) C6 Tantalum Capacitors C16, C17 100 nF Chip Capacitors (0805) P1 kΩ Potentiometer CMS Cermet Multi - turn R1, R2, R3, R4 Ω, 1/8 W Chip Resistors (0805) R6 kΩ, 1/4 W Chip Resistors (1206) MW4IC915MBR1 MW4IC915GMBR1 Quiescent Current Temperature Compensation ...

Page 7

... PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 6. MW4IC915MBR1(GMBR1) Reference Board Component Layout RF Device Data Freescale Semiconductor C15 C16 GROUND MW4IC915MB Rev 0 C8 GROUND MW4IC915MBR1 MW4IC915GMBR1 7 ...

Page 8

... DQ1 DQ2 910 MHz 25_C 31 PAE 30 85_C 0 OUTPUT POWER (WATTS) out Figure 10. Power Gain and Power Added Efficiency versus Output Power MW4IC915MBR1 MW4IC915GMBR1 8 PAE IRL Vdc (PEP) out mA 240 mA DQ1 DQ2 Two−Tone Measurement 100 kHz Tone Spacing 880 900 920 ...

Page 9

... Vdc out mA 240 mA DQ1 DQ2 880 890 900 910 920 930 940 950 f, FREQUENCY (MHz) Frequency 25_C T = 85_C C −30_C Vdc mA 240 mA DQ1 DQ2 EDGE Modulation f = 910 MHz OUTPUT POWER (WATTS) out versus Output Power 85_C 25_C 100 MW4IC915MBR1 MW4IC915GMBR1 960 100 9 ...

Page 10

... Figure 17. Series Equivalent Input and Load Impedance MW4IC915MBR1 MW4IC915GMBR1 Ω load f = 900 MHz f = 980 MHz mA 240 mA P1dB DD DQ1 DQ2 out f Z load MHz Ω 900 3.23 - j4.30 910 3.24 - j4.36 920 3.25 - j4.42 930 3.25 - j4.47 940 3.23 - j4.52 950 3.21 - j4.56 960 3 ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MW4IC915MBR1 MW4IC915GMBR1 11 ...

Page 12

... MW4IC915MBR1 MW4IC915GMBR1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MW4IC915MBR1 MW4IC915GMBR1 13 ...

Page 14

... MW4IC915MBR1 MW4IC915GMBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW4IC915MBR1 MW4IC915GMBR1 15 ...

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... MW4IC915MBR1 MW4IC915GMBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MW4IC915MBR1 MW4IC915GMBR1 17 ...

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... MW4IC915MBR1 MW4IC915GMBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MW4IC915MBR1 MW4IC915GMBR1 19 ...

Page 20

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 Rev. 6, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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