IGBT 600V 58A 192W SOT227

 

APT30GF60JU2

Manufacturer Part NumberAPT30GF60JU2
DescriptionIGBT 600V 58A 192W SOT227
ManufacturerMicrosemi Power Products Group
APT30GF60JU2 datasheets

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Specifications of APT30GF60JU2

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 30A
Current - Collector (ic) (max)58ACurrent - Collector Cutoff (max)40µA
Input Capacitance (cies) @ Vce1.85nF @ 25VPower - Max192W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT30GF60JU2MI
APT30GF60JU2MI
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Download datasheet (470Kb)Embed
Next
®
ISOTOP
Boost chopper
NPT IGBT
K
G
E
K
E
C
G
ISOTOP
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
C1
Continuous Collector Current
I
C2
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
I
RBSOA clamped Inductive load Current R
LM
IF
Maximum Average Forward Current
A V
IF
RMS Forward Current (Square wave, 50% duty)
RMS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
I
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction
C
•
Brake switch
Features
•
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
•
®
ISOTOP
Package (SOT-227)
•
Very low stray inductance
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive T
•
RoHS Compliant
•
T
= 25°C
C
T
= 100°C
C
T
= 25°C
C
T
= 25°C
C
=11Ω
T
= 25°C
G
C
Duty cycle=0.5
T
= 80°C
C
www.microsemi.com
APT30GF60JU2
= 600V
CES
= 30A @ Tc = 100°C
C
®
of V
C
CEsat
Max ratings
Unit
600
V
58
A
30
110
±20
V
192
W
60
A
30
A
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APT30GF60JU2 Summary of contents

  • Page 1

    ... Low junction to case thermal resistance • Easy paralleling due to positive T • RoHS Compliant • 25° 100° 25° 25°C C =11Ω 25° Duty cycle=0 80°C C www.microsemi.com APT30GF60JU2 = 600V CES = 30A @ Tc = 100°C C ® CEsat Max ratings Unit 600 110 ±20 V 192 – 8 ...

  • Page 2

    ... T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Total switching Losses ts APT30GF60JU2 = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V j GE ...

  • Page 3

    ... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT30GF60JU2 Test Conditions Min I = 30A 60A 30A T = 125° ...

  • Page 4

    ... Typical IGBT Performance Curve 0.7 0.9 0.6 0.7 0.5 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APT30GF60JU2 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com – 8 ...

  • Page 5

    ... APT30GF60JU2 www.microsemi.com 5 – 8 ...

  • Page 6

    ... Typical Diode Performance Curve APT30GF60JU2 www.microsemi.com 6 – 8 ...

  • Page 7

    ... APT30GF60JU2 www.microsemi.com 7 – 8 ...

  • Page 8

    ... Cathode Emitter Dimensions in Millimeters and (Inches) www.microsemi.com APT30GF60JU2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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