APT30GF60JU2 Microsemi Power Products Group, APT30GF60JU2 Datasheet

IGBT 600V 58A 192W SOT227

APT30GF60JU2

Manufacturer Part Number
APT30GF60JU2
Description
IGBT 600V 58A 192W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT30GF60JU2

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
58A
Current - Collector Cutoff (max)
40µA
Input Capacitance (cies) @ Vce
1.85nF @ 25V
Power - Max
192W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT30GF60JU2MI
APT30GF60JU2MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT30GF60JU2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT30GF60JU2
Manufacturer:
APT
Quantity:
15 500
Absolute maximum ratings
Symbol
IF
V
IF
V
I
I
I
I
P
ISOTOP
CM
LM
RMS
CES
C1
C2
GE
A V
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA clamped Inductive load Current R
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
NPT IGBT
ISOTOP
E
®
Boost chopper
C
K
E
Parameter
K
C
www.microsemi.com
Duty cycle=0.5
G
=11Ω
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Non Punch Through (NPT) THUNDERBOLT IGBT
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
T
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
®
= 80°C
V
I
Package (SOT-227)
C
APT30GF60JU2
CES
= 30A @ Tc = 100°C
= 600V
Max ratings
600
110
±20
192
58
30
60
30
39
C
of V
CEsat
Unit
W
A
A
A
V
V
®
1 – 8

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APT30GF60JU2 Summary of contents

Page 1

... Low junction to case thermal resistance • Easy paralleling due to positive T • RoHS Compliant • 25° 100° 25° 25°C C =11Ω 25° Duty cycle=0 80°C C www.microsemi.com APT30GF60JU2 = 600V CES = 30A @ Tc = 100°C C ® CEsat Max ratings Unit 600 110 ±20 V 192 – 8 ...

Page 2

... T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Total switching Losses ts APT30GF60JU2 = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V j GE ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT30GF60JU2 Test Conditions Min I = 30A 60A 30A T = 125° ...

Page 4

... Typical IGBT Performance Curve 0.7 0.9 0.6 0.7 0.5 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APT30GF60JU2 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www.microsemi.com – 8 ...

Page 5

... APT30GF60JU2 www.microsemi.com 5 – 8 ...

Page 6

... Typical Diode Performance Curve APT30GF60JU2 www.microsemi.com 6 – 8 ...

Page 7

... APT30GF60JU2 www.microsemi.com 7 – 8 ...

Page 8

... Cathode Emitter Dimensions in Millimeters and (Inches) www.microsemi.com APT30GF60JU2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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