APT30GP60BDQ1G Microsemi Power Products Group, APT30GP60BDQ1G Datasheet

IGBT 600V 100A 463W TO247

APT30GP60BDQ1G

Manufacturer Part Number
APT30GP60BDQ1G
Description
IGBT 600V 100A 463W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT30GP60BDQ1G.pdf (9 pages)

Specifications of APT30GP60BDQ1G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 30A
Current - Collector (ic) (max)
100A
Power - Max
463W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT30GP60BDQ1GMP
APT30GP60BDQ1GMP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT30GP60BDQ1G
Manufacturer:
TE
Quantity:
29
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 400V, 37A
• 200 kHz operation @ 400V, 24A
• SSOA Rated
CE
CE
CE
@ T
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
C
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
= 0V, T
= 0V, T
IGBT
= 30A, T
= 30A, T
j
C
= 25°C)
j
j
= 500µA)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT30GP60BDQ1(G)
MIN
600
3
120A @ 600V
APT30GP60BDQ1
APT30GP60BDQ1G*
-55 to 150
600
±20
100
120
463
300
TYP
49
4.5
2.2
2.1
APT30GP60BDQ1(G)
600V
G
G
C
E
3000
±100
MAX
500
2.7
6
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT30GP60BDQ1G Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT30GP60BDQ1(G) APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish 25°C unless otherwise specified. C APT30GP60BDQ1(G) 600 ±20 100 49 120 120A @ 600V 463 -55 to 150 300 MIN TYP MAX 600 3 4 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

T = -55° 25° 125° 0.5 1.0 1.5 2.0 2 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 250µs PULSE TEST<0.5 % DUTY CYCLE T = -55° ...

Page 4

V = 15V 400V 25°C T =125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.30 0.9 0.25 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. ...

Page 6

APT15DQ60 90% Gate Voltage t d(off) 90 10% 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on) Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT30GP60BDQ1(G) Gate Voltage T ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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