APT23F60B Microsemi Power Products Group, APT23F60B Datasheet

MOSFET N-CH 600V 23A TO-247

APT23F60B

Manufacturer Part Number
APT23F60B
Description
MOSFET N-CH 600V 23A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 8™r
Datasheet

Specifications of APT23F60B

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
310 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4415pF @ 25V
Power - Max
415W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Symbol
T
Torque
Power MOS 8
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
FEATURES
J
R
R
V
E
I
,T
W
I
• Fast switching with low EMI
• Low t rr for high reliability
• Ultra low C rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
P
T
DM
I
AR
θ CS
θ JC
GS
D
AS
D
STG
L
T
Parameter
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
is a high speed, high voltage N-channel switch-mode power MOSFET.
rss
/C
iss
N-Channel FREDFET
result in excellent noise immunity and low switching loss. The
1
C
= 25°C
C
C
Microsemi Website - http://www.microsemi.com
2
= 25°C
= 100°C
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
rr
, soft
600V, 24A, 0.29Ω Max, t rr ≤220ns
Min
-55
Single die FREDFET
APT23F60B
Ratings
Typ
0.11
0.22
±30
6.2
615
24
14
80
11
APT23F60B
APT23F60S
APT23F60S
Max
0.30
415
150
300
1.1
10
D
3
PAK
G
°C/W
in·lbf
Unit
Unit
N·m
mJ
°C
W
oz
A
V
A
g
D
S

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APT23F60B Summary of contents

Page 1

... Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT23F60B APT23F60S 600V, 24A, 0.29Ω Max ≤220ns 3 D PAK , soft rr APT23F60B APT23F60S Single die FREDFET G Ratings ±30 615 11 Min Typ Max 415 0.30 0.11 -55 ...

Page 2

Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefficient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefficient GS(th Zero Gate Voltage Drain Current DSS ...

Page 3

V = 10V -55° 25° 150° 125° DRAIN-TO-SOURCE VOLTAGE (V) ...

Page 4

... Gate Drain Source APT23F60B_S ds(on) 13µs 100µs 1ms 10ms = 1 T 150°C 100ms 25°C ...

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