APT20M36BFLLG Microsemi Power Products Group, APT20M36BFLLG Datasheet
APT20M36BFLLG
Manufacturer Part Number
APT20M36BFLLG
Description
MOSFET N-CH 200V 65A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT20M36BFLLG.pdf
(5 pages)
Specifications of APT20M36BFLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 32.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
329W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT20M36BFLLG
Manufacturer:
MCCO
Quantity:
7 134
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
D
AR
AS
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
•
DS
C
APT Website - http://www.advancedpower.com
FAST RECOVERY BODY DIODE
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
by significantly lowering R
(V
= 200V, V
= 160V, V
R
= 1mA)
= 0V, I
GS
FREDFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 32.5A)
All Ratings: T
C
= 125°C)
3
PAK Package
APT20M36BFLL
APT20M36SFLL
DS(ON)
200V 65A 0.036
C
= 25°C unless otherwise specified.
APT20M36BFLL_SFLL
MIN
200
3
BFLL
TO-247
-55 to 150
1300
2.63
TYP
200
260
±30
±40
329
300
65
65
30
0.036
±100
1000
MAX
250
5
D
G
SFLL
3
PAK
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT20M36BFLLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
RC MODEL Junction temp. (°C) 0.0329 Power 0.158 (watts) 0.189 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 V DS > (ON (ON)MAX. 250µSEC. PULSE TEST 120 @ <0.5 % DUTY CYCLE 100 ...
Page 4
OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I ...
Page 5
Typical Performance Curves 10% t d(on Drain Current 90 10% Drain Voltage Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT60DS30 D.U.T. Figure 20, Inductive Switching Test Circuit ...