APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet

IGBT 600V 198A 833W TO264

APT65GP60L2DQ2G

Manufacturer Part Number
APT65GP60L2DQ2G
Description
IGBT 600V 198A 833W TO264
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT65GP60L2DQ2G.pdf (9 pages)

Specifications of APT65GP60L2DQ2G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 65A
Current - Collector (ic) (max)
198A
Power - Max
833W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT65GP60L2DQ2GMI
APT65GP60L2DQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT65GP60L2DQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 400V, 54A
• 50 kHz operation @ 400V, 76A
• SSOA Rated
@ T
CE
CE
CE
7
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
@ T
C
®
GE
GE
C
= 150°C
GE
GE
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
= ±20V)
, I
= 25°C
C
GE
= 2.5mA, T
GE
GE
®
C
C
= 0V, I
= 0V, T
= 0V, T
IGBT
= 65A, T
= 65A, T
C
j
j
j
= 1000µA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
MIN
600
APT65GP60L2DQ2
3
APT65GP60L2DQ2
APT65GP60L2DQ2G*
250A @ 600V
-55 to 150
600
±30
198
250
833
300
TYP
96
4.5
2.2
2.1
APT65GP60L2DQ2
600V
G
G
C
E
1250
5500
MAX
±100
2.7
6
TO-264
Max
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

Related parts for APT65GP60L2DQ2G

Image
Part Number
Description
Manufacturer
Datasheet
Request R
APT30GP60BDQ1G
Part Number:
APT30GP60BDQ1G
Description:
IGBT 600V 100A 463W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30GP60BDQ1G.pdf (9 pages)
APT11GP60BDQBG
Part Number:
APT11GP60BDQBG
Description:
IGBT 600V 41A 187W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT11GP60BDQBG.pdf (7 pages)
APT23F60B
Part Number:
APT23F60B
Description:
MOSFET N-CH 600V 23A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT23F60B.pdf (4 pages)
APT5040KFLLG
Part Number:
APT5040KFLLG
Description:
MOSFET N-CH 500V 17A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5040KFLLG.pdf (5 pages)
APT1204R7KFLLG
Part Number:
APT1204R7KFLLG
Description:
MOSFET N-CH 1200V 3.5A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT1204R7KFLLG.pdf (5 pages)
APT5024BVRG
Part Number:
APT5024BVRG
Description:
MOSFET N-CH 500V 22A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5024BVRG.pdf (4 pages)
APT10M25BVRG
Part Number:
APT10M25BVRG
Description:
MOSFET N-CH 100V 75A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT10M25BVRG.pdf (4 pages)
APT20M45BVRG
Part Number:
APT20M45BVRG
Description:
MOSFET N-CH 200V 56A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M45BVRG.pdf (4 pages)
APT5018BLLG
Part Number:
APT5018BLLG
Description:
MOSFET N-CH 500V 27A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5018BLLG.pdf (5 pages)
APT30M85BVRG
Part Number:
APT30M85BVRG
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30M85BVRG.pdf (4 pages)
APT20M40BVRG
Part Number:
APT20M40BVRG
Description:
MOSFET N-CH 200V 59A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M40BVRG.pdf (4 pages)
APT5020BVFRG
Part Number:
APT5020BVFRG
Description:
MOSFET N-CH 500V 26A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5020BVFRG.pdf (4 pages)
APT30M85BVFRG
Part Number:
APT30M85BVFRG
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30M85BVFRG.pdf (4 pages)
APT20M36BFLLG
Part Number:
APT20M36BFLLG
Description:
MOSFET N-CH 200V 65A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M36BFLLG.pdf (5 pages)
APT5016BFLLG
Part Number:
APT5016BFLLG
Description:
MOSFET N-CH 500V 30A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5016BFLLG.pdf (5 pages)

APT65GP60L2DQ2G Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT65GP60L2DQ2 APT65GP60L2DQ2 APT65GP60L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-264 Max 25°C unless otherwise specified. C APT65GP60L2DQ2 600 ±30 198 96 250 250A @ 600V 833 -55 to 150 300 MIN TYP ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

T = -55° 25° 125°C J 250µs PULSE TEST<0.5 % DUTY CYCLE T = -55° 25° 125° 25°C. J 250µs PULSE TEST <0.5 % DUTY ...

Page 4

V = 15V 400V 25°C T =125° 5Ω 100 µ 105 125 I , COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 5000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.16 0.9 0.14 0.12 0.7 0.10 0.08 0.5 0.06 0.3 0.04 0.02 0.1 0.05 ...

Page 6

APT40DQ60 D.U.T. Figure 21, Inductive Switching Test Circuit 65GP60B2 @ 125C Eoff 90 d(off) f 90% 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 125° 175° 25° -55° 0 ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

Related keywords