APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 3

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

T
TEST<0.5 % DUTY
J
250µs PULSE
= 125°C
CYCLE
T
J
T
= 125°C
J
= 25°C
T
T
J
J
= -55°C
= 25°C
T
J
= -55°C
<0.5 % DUTY CYCLE
250µs PULSE TEST
T
J
= 25°C.
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
T
= 25°C
= 65A
J
= 125°C
V
GE
= 15V.
T
V
J
= 25°C
CE
V
T
J
CE
= 300V
= -55°C
= 120V
V
CE
= 480V