APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 7

IGBT 600V 198A 833W TO264

APT65GP60L2DQ2G

Manufacturer Part Number
APT65GP60L2DQ2G
Description
IGBT 600V 198A 833W TO264
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT65GP60L2DQ2G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 65A
Current - Collector (ic) (max)
198A
Power - Max
833W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT65GP60L2DQ2GMI
APT65GP60L2DQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT65GP60L2DQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol
I
Symbol
Symbol
F
I
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
F
(RMS)
I
I
I
I
RRM
RRM
RRM
FSM
(AV)
Q
Q
Q
V
t
t
t
t
rr
rr
rr
rr
F
rr
rr
rr
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Forward Voltage
10
-5
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
10
-4
Case temperature (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
I
F
= 1A, di
Junction
temp (°C)
RECTANGULAR PULSE DURATION (seconds)
SINGLE PULSE
(watts)
Power
F
/dt = -100A/µs, V
C
10
= 111°C, Duty Cycle = 0.5)
J
-3
= 45°C, 8.3ms)
I
I
I
I
F
F
F
I
I
F
F
F
= 65A
= 130A
= 65A, T
V
V
= 40A, di
V
= 40A, di
= 40A, di
R
R
RC MODEL
R
= 400V, T
= 400V, T
Test Conditions
= 400V, T
0.289 °C/W
0.381 °C/W
R
J
= 125°C
= 30V, T
F
F
F
/dt = -1000A/µs
All Ratings: T
/dt = -200A/µs
/dt = -200A/µs
10
C
C
C
-2
= 125°C
= 125°C
= 25°C
J
= 25°C
0.00448 J/°C
0.120 J/°C
C
= 25°C unless otherwise specified.
Note:
Peak T J = P DM x Z θJC + T C
MIN
MIN
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
APT65GP60L2DQ2
10
-1
t 1
t 2
TYP
TYP
160
480
920
320
2.3
2.9
1.4
25
35
85
20
22
40
63
3
6
APT65GP60L2DQ2
t 1
/
t 2
MAX
MAX
1.0
-
-
Amps
Amps
UNIT
Amps
Amps
UNIT
Volts
UNIT
nC
nC
nC
ns
ns
ns

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