APT10M25BVRG Microsemi Power Products Group, APT10M25BVRG Datasheet

MOSFET N-CH 100V 75A TO-247

APT10M25BVRG

Manufacturer Part Number
APT10M25BVRG
Description
MOSFET N-CH 100V 75A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT10M25BVRG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
5160pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT10M25BVRG
Manufacturer:
ST
Quantity:
5 000
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
5
2
5
(Repetitive and Non-Repetitive)
5
DS
C
APT Website - http://www.advancedpower.com
(V
1
= V
C
= 25 C
• 100% Avalanche Tested
• Popular TO-247 Package
DS
= 25 C
4
GS
GS
> I
2
DS
DS
, I
GS
= 30V, V
Bend, Oregon 97702-1035
F-33700 Merignac - France
D(on)
D
(V
= V
= 0.8 V
= 0V, I
= 1.0mA)
5
GS
DSS
x R
= 10V, 0.5 I
, V
DS(on)
DSS
D
DS
= 250 A)
GS
= 0V)
®
, V
= 0V)
Max, V
GS
D[Cont.]
= 0V, T
All Ratings: T
GS
)
= 10V)
C
= 125 C)
Phone: (541) 382-802 8
Phone: (33) 5 57 92 15 15
APT10M25BVR
100V
C
®
= 25 C unless otherwise specified.
MIN
100
75
2
APT10M25BVR
-55 to 150
75A 0.025
1500
TYP
100
300
300
300
2.4
75
75
30
30
40
G
TO-247
FAX: (541) 388-036 4
FAX: (33) 5 56 47 97 61
0.025
1000
MAX
250
100
4
D
S
Ohms
Amps
Watts
Amps
Amps
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
mJ
nA
C
A

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APT10M25BVRG Summary of contents

Page 1

POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

APT10M25BVR 150 V GS =10V & 15V 125 100 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 150 - +25 C 125 ...

Page 4

OPERATION HERE LIMITED (ON) 100 =+ =+150 C SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I ...

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