APT10M25BVRG Microsemi Power Products Group, APT10M25BVRG Datasheet - Page 2

• Manufacturer Part Number: APT10M25BVRG
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M25BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
3
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum T
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
C
t
t
R
R
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
SM
I
oss
t
t
SD
rss
iss
S
gs
gd
r
f
rr
JC
JA
g
rr
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
10
-4
SINGLE PULSE
3
1
2
(V
S
5
= -I
5
GS
S
(Body Diode)
= -I
(Body Diode)
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
j
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
I
D
10
I
)
= 0.5 I
D
4
5
Test Conditions
-2
V
V
= I
Starting T
The maximum current is limited by lead temperature.
DD
DD
V
V
V
R
f = 1 MHz
D[Cont.]
V
DS
GS
GS
G
GS
= 0.5 V
D[Cont.]
= 0.5 V
= 1.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
= +25 C, L = 0.53mH, R
DSS
@ 25 C
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D = t 1 / t
1.0
t 1
G
= 25 , Peak I
t 2
4300
1600
TYP
150
TYP
TYP
650
150
1.0
28
75
13
22
40
10
2
APT10M25BVR
5160
2240
MAX
0.42
MAX
MAX
300
975
225
115
L
1.3
40
42
26
44
60
20
75
= 75A
10
Amps
UNIT
UNIT
Volts
UNIT
C/W
nC
pF
ns
ns
C