APT10M25BVRG Microsemi Power Products Group, APT10M25BVRG Datasheet - Page 3

• Manufacturer Part Number: APT10M25BVRG
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M25BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
125
100
150
125
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
75
50
25
75
50
25
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT10M25BVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
T J = +125 C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T J = +25 C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
-25
@ < 0.5 % DUTY CYCLE
T
250 SEC. PULSE TEST
V
GS
J
T
, JUNCTION TEMPERATURE ( C)
V GS =10V & 15V
10
50
= 10V
C
2
D
, CASE TEMPERATURE ( C)
[Cont.]
0
T J = +125 C
25
75
20
4
T J = +25 C
T J = -55 C
50
100
T J = -55 C
30
6
75
100 125 150
125
40
8
6.5V
5.5V
4.5V
4V
7V
6V
5V
150
50
10
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
150
125
100
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
75
50
25
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
25
= 10V @ 0.5 I
, JUNCTION TEMPERATURE ( C)
T
NORMALIZED TO
, DRAIN CURRENT (AMPERES)
C
1
V GS =15V
, CASE TEMPERATURE ( C)
0
0
50
DS
V GS =20V
25
25
(ON) vs DRAIN CURRENT
2
D
V GS =10V
[Cont.]
75
50
50
10V
3
75
75 100 125 150
100
100 125 150
4
125
6.5V
5.5V
4.5V
4V
7V
6V
5V
150
5